Semiconductor Pad Wiring MIM Capacitor Integration
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Solution Overview
Problem
The presence of a ring pattern in the insulating layer surrounding the pad in semiconductor devices can lead to deteriorated power and signal integrity by obstructing wiring configurations, which existing technologies have not effectively addressed.
Innovation Solution
The semiconductor device incorporates a configuration where first, second, and third wirings are positioned between the pad and circuit, with power supplies providing different voltages to form metal-insulator-metal (MIM) capacitors, and a pad contact directly connects the pad to the circuit, eliminating the ring pattern and enhancing wiring efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a ring pattern is formed in the insulating layer below the pad, then the pad structure is defined, but the wiring cannot be arranged in the surrounded portion leading to deteriorated power and signal integrity
Solution Approach 1:
The insulating layer is segmented into multiple regions: a first region with the ring pattern that defines the pad structure, and a second region without the ring pattern that allows wiring arrangement. This segmentation resolves the contradiction by allowing both pad definition and wiring placement in different spatial zones.
Solution Approach 2:
The wiring is arranged in a dimension outside the ring pattern's enclosed area. Instead of trying to fit wiring within the ring pattern's inner space, the solution extends the wiring path to the outer region of the insulating layer, utilizing additional spatial dimensionality to achieve both pad definition and wiring connectivity.
2Adaptability or versatility
If multiple wirings are arranged between the pad and circuit, then wiring flexibility is improved, but the device size increases
Solution Approach 1:
Multiple wirings (first, second, and third wirings) are merged into a compact stacked arrangement between the pad and circuit. Instead of spreading them out horizontally, they are vertically integrated in a confined space, achieving wiring flexibility without proportionally increasing the device footprint.
Solution Approach 2:
The multiple wirings are nested within each other in a hierarchical structure, with the first wiring closest to the pad, followed by the second wiring, and the third wiring closest to the circuit. This nested arrangement allows multiple connection paths to coexist in a compact volume, providing flexibility without excessive area occupation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases power and signal integrity by removing the ring pattern, allowing for improved electrical connections and reduced size, while the MIM capacitors enhance performance, resulting in a semiconductor device with increased reliability and efficiency.
Implementation Method 1
The first and second power supplies may supply different powers to adjacent metals included in the first to third wirings to form a metal-insulator-metal (MIM) capacitor
Implementation Method 2
The third power supply is configured to supply a different power to the first wiring and the second wiring, or the second wiring and the third wiring
Data Source
AI summary
A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.