Semiconductor Device Metallic Interlayer Chipping Prevention
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Solution Overview
Problem
Conventional semiconductor devices are prone to chipping during transportation due to direct force application on the thin semiconductor element, which is unsupported by the resin at its edge.
Innovation Solution
A semiconductor device design featuring a thin semiconductor element with front-side and back-side electrodes, a metallic member with a thickness equal to or greater than the semiconductor element, and a resin member surrounding the metallic member to prevent direct load on the semiconductor element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the thin semiconductor element is directly supported by resin at its edge, then the structure is simple and easy to manufacture, but the semiconductor element is prone to chipping during transportation due to direct force application
Solution Approach 1:
The patent introduces a metallic member as an intermediary between the resin and the thin semiconductor element. This metallic member has a thickness equal to or greater than the semiconductor element and is surrounded by the resin, which in turn contacts the lateral side of the metallic member. This intermediary structure prevents direct force application to the semiconductor element during handling and transportation, thereby preventing chipping while maintaining manufacturing simplicity.
2Reliability
If the metallic member with thickness equal to or greater than the semiconductor element is introduced, then the semiconductor element is protected from chipping, but the device complexity increases
Solution Approach 1:
The metallic member serves multiple functions simultaneously: it acts as a protective barrier against direct force application, provides structural support with its thickness equal to or greater than the semiconductor element, and enables the resin to surround and protect the periphery of the semiconductor element. This multi-functionality reduces the need for additional separate protective components, thereby limiting the increase in device complexity.
3Reliability
If the resin surrounds the periphery of the metallic member with the metallic member thickness equal to or greater than the semiconductor element, then the semiconductor element is protected from direct load, but the manufacturing process becomes more complex
Solution Approach 1:
The metallic member is formed on the electrode surface before the resin is applied. This preliminary formation of the metallic member with thickness equal to or greater than the semiconductor element creates a pre-established protective structure. Subsequently, the resin is applied to surround the periphery of this metallic member, which simplifies the overall manufacturing process compared to attempting to create the protective structure after resin application.
Data Source
AI summary
Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.