3D Memory Stacked Structure Conductive Plug Contact
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Solution Overview
Problem
Current semiconductor technologies face challenges in increasing storage capacity in limited memory volumes, particularly in three-dimensional memory devices where element density and pitch between elements need to be optimized for enhanced performance.
Innovation Solution
A semiconductor structure comprising a substrate with a stacked structure of alternately arranged dielectric and conductive films, a dielectric layer on the sidewall, a conductive structure, and a conductive plug that physically contacts one of the conductive films, allowing for improved electrical conductivity and contact efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If element density is increased in 3D memory devices, then storage capacity is improved, but pitch between elements is reduced making manufacturing more difficult
Solution Approach 1:
The patent transitions from planar memory architecture to three-dimensional stacked architecture, arranging memory cells vertically across multiple layers. This dimensional change allows storage capacity to scale with the number of stacked layers while maintaining adequate pitch dimensions within each layer, effectively decoupling storage density from lateral pitch constraints.
Solution Approach 2:
The patent implements a stacked structure where multiple memory cell layers are nested vertically, with each layer containing conductive films and dielectric films arranged in alternating patterns. This nesting approach packs more storage elements into a limited volume without requiring proportional reduction in pitch between adjacent elements within each layer.
2Reliability
If contact efficiency is improved by forming conductive plugs, then electrical conductivity is enhanced, but process complexity increases
Solution Approach 1:
The patent forms conductive plugs in advance within dielectric structures before final contact formation. By preparing the conductive plug structure early in the manufacturing process, the patent simplifies subsequent steps and ensures proper electrical contact alignment, reducing overall process complexity despite the added structural element.
Solution Approach 2:
The patent introduces conductive plugs as intermediary structures that bridge between upper and lower conductive films through dielectric layers. These plugs serve as intermediate conductive pathways, enabling electrical connection across insulating barriers without requiring direct contact between distant conductive elements, thus simplifying the contact formation process.
Data Source
AI summary
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a stacked structure, a dielectric layer, a conductive structure, a dielectric structure and a conductive plug. The stacked structure includes dielectric films and conductive films arranged alternately. The dielectric layer is between the conductive structure and a sidewall of the stacked structure. The dielectric structure is on the stacked structure and defining a through via. The conductive plug fills the through via and physically contacts one of the conductive films exposed by the through via and adjoined with the dielectric layer.