Semiconductor Light Detection Device With Through-Hole Electrodes
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Solution Overview
Problem
Light detection devices with semiconductor photodiode arrays face challenges in achieving improved temporal resolution due to varying interconnection distances between channels, which are influenced by resistance and capacitance, limiting their performance, especially when trying to cover larger areas.
Innovation Solution
The configuration includes a semiconductor light detection element with through-hole electrodes penetrating from one surface to the other, connected via bump electrodes to the mounting substrate, allowing for extremely short and uniform interconnection distances, thereby minimizing the impact of resistance and capacitance and enhancing temporal resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the interconnection distances of the respective channels are set in accord with the channel having the longest interconnection distance to equalize temporal resolutions, then the temporal resolutions among the channels are equalized, but the interconnection distances become relatively longer which limits improvement in temporal resolution
Solution Approach 1:
The patent introduces a new spatial dimension by stacking the semiconductor light detection element and mounting substrate in layers. Through-hole electrodes penetrate the semiconductor substrate from the first principal surface to the second principal surface, creating vertical interconnections that dramatically reduce the horizontal interconnection distance while maintaining channel equality across the large-area detector.
2Area of stationary object
If multiple channels are used to cover larger area, then the detection area is increased, but the interconnection distances among channels become different due to varying distances from channels to the common electrode, leading to different temporal resolutions among channels
Solution Approach 1:
The patent segments the common electrode into channel-specific through-hole electrodes, with each through-hole electrode serving a specific channel. This segmentation allows each channel to have its own dedicated vertical interconnection path, eliminating the variation in interconnection distances that would otherwise occur in a shared electrode configuration.
Solution Approach 2:
By transitioning from a planar electrode arrangement to a three-dimensional stacked configuration with through-hole electrodes penetrating the substrate, the patent enables large detection areas while maintaining uniform temporal resolution through vertical interconnections that are independent of horizontal channel positions.
3Measurement precision
If the interconnection distances are reduced to improve temporal resolution, then the temporal resolution is improved, but the detection area that can be covered is limited
Solution Approach 1:
The patent resolves this contradiction by moving interconnections to the vertical dimension through through-hole electrodes that penetrate the semiconductor substrate. This allows the horizontal plane to be dedicated entirely to maximizing detection area, while the vertical dimension provides the short, uniform interconnection paths needed for high temporal resolution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves temporal resolution while enabling the construction of light detection devices that cover larger areas without significant variations in interconnection distances, thus enhancing their performance.
Implementation Method 1
a plurality of avalanche photodiodes operating in Geiger mode... when an avalanche photodiode forming a pixel detects a photon to induce Geiger discharge, a pulsed signal is obtained
Implementation Method 2
quenching resistors connected in series to the respective avalanche photodiodes... a pulsed signal is obtained by action of the quenching resistor connected to the avalanche photodiode
Data Source
AI summary
A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.