Light-Emitting Element Etching Structure to Protect the Active Layer
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Solution Overview
Problem
Existing display devices face challenges in minimizing damage to the active layer during the etching process, particularly due to the differences in inclination angles and widths of semiconductor layers, which can lead to inefficiencies and potential short-circuits in light emitting elements.
Innovation Solution
A method is introduced where a first semiconductor layer and active layer are etched first, followed by protecting their side surfaces with an insulating layer, and then etching a second semiconductor layer, ensuring different inclination angles and widths to prevent damage and improve structural integrity, along with a specific configuration of insulating and reflection layers to enhance light emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single etching process is used for both first semiconductor layer and second semiconductor layer, then the manufacturing process is simpler, but the active layer suffers from damage and structural integrity is compromised
Solution Approach 1:
The etching process is divided into two separate stages: a first etching process that etches the first semiconductor layer and active layer to form a first element rod, and a second etching process that etches the second semiconductor layer to form a second element rod. This segmentation allows each etching process to be optimized independently, preventing damage to the active layer while maintaining manufacturing feasibility.
Solution Approach 2:
The first etching process is performed as a preliminary action before the second etching process. By first forming the first element rod with the active layer, then performing the second etching to form the second element rod, the process ensures that the active layer is already protected and structured before the final etching occurs, preventing damage and ensuring structural integrity.
2Ease of manufacture
If the side surfaces of semiconductor layers have the same inclination angle, then the manufacturing process is simpler, but light emission efficiency is reduced
Solution Approach 1:
The patent introduces asymmetry in the inclination angles of the side surfaces of the first and second semiconductor layers. The first element rod has side surfaces with a first inclination angle, while the second element rod has side surfaces with a second inclination angle that is different from the first. This asymmetric design optimizes light emission efficiency by controlling the direction and distribution of emitted light, while the manufacturing process remains feasible through the sequential etching approach.
Data Source
AI summary
A light emitting element, a display device including the same and a method of fabricating the same. The light emitting element may include an element rod including a first semiconductor layer, an active layer, and a second semiconductor layer. First and second contact electrodes may be respectively disposed on a first end surface and a second and opposite end surface of the element rod. A reflection layer may surround the first contact electrode and the element rod. An inner insulating layer may be disposed inside the reflection layer and surround the first contact electrode and the element rod. An outer insulating layer external to the reflection layer and may surround the first contact electrode and the element rod. A first inclination of side surfaces of the first semiconductor layer and the active layer and a second inclination of a side surface of the second semiconductor layer may be different.