Light Emitting Element Openings for Threading Dislocation Loss
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Solution Overview
Problem
Current light emitting elements face challenges in achieving high luminous efficiency due to threading dislocations in n-type semiconductors, which can lead to light loss and decreased intensity.
Innovation Solution
The light emitting element incorporates threading dislocations in the n-type semiconductor, with openings formed on its surface based on these dislocations, ensuring that light from the active layer can be emitted without passing through the dislocations, thereby minimizing loss and enhancing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If threading dislocations are present in the n-type semiconductor, then the device can be manufactured with conventional processes, but light loss occurs and luminous efficiency decreases
Solution Approach 1:
The patent converts the harmful threading dislocations into beneficial light extraction pathways by forming openings at dislocation sites. The dislocations that previously caused light loss and non-radiative recombination are now utilized as controlled exit points for light emission, transforming a manufacturing defect into a functional feature that improves luminous efficiency.
Solution Approach 2:
The patent introduces a porous structure with openings formed at threading dislocation locations in the n-type semiconductor layer. This porous configuration creates multiple light extraction pathways, allowing light to escape through the openings rather than being trapped and reabsorbed, thereby reducing total internal reflection and improving light outcoupling efficiency.
2Device complexity
If light is emitted through the n-type semiconductor, then device structure is simplified, but light intensity decreases due to absorption and scattering
Solution Approach 1:
The patent segments the n-type semiconductor layer by forming multiple openings at threading dislocation sites. This segmentation creates discrete light extraction channels distributed throughout the layer, allowing light to escape at multiple locations rather than attempting to pass through the entire continuous semiconductor material, thereby reducing absorption and scattering losses.
Solution Approach 2:
The openings formed at threading dislocation sites serve as intermediary structures that facilitate light extraction. These openings act as mediators between the active layer and the external environment, providing controlled pathways for light to exit the device while minimizing interaction with absorbing and scattering materials.
3Ease of manufacture
If threading dislocations extend through the active layer, then epitaxial growth is simpler, but device reliability and light emission quality deteriorate
Solution Approach 1:
The patent extracts or removes the harmful effects of threading dislocations by forming openings at their locations. The openings are specifically positioned at dislocation sites, effectively taking out the problematic regions from the continuous semiconductor structure and converting them into controlled light extraction points, thereby improving light emission quality without complicating the epitaxial growth process.
Data Source
AI summary
A light emitting element includes an n-type semiconductor, a p-type semiconductor, and an active layer between the n-type semiconductor and the p-type semiconductor, threading dislocations are formed in the n-type semiconductor, and openings are formed on a surface of the n-type semiconductor based on the threading dislocations.