Light Emitting Element Passivation for Uniform Sub-Pixel Emission
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Solution Overview
Problem
Current light emitting elements face challenges in achieving uniform light efficiency across sub-pixels, particularly in reducing defect rates and enhancing emission efficiency, especially as their size decreases, leading to increased non-radiative recombination and reduced performance in red and blue light emission.
Innovation Solution
The implementation of a light emitting element with a semiconductor stack structure, an intermediate passivation structure comprising nitrogen-based materials like GaPN, and an insulating layer made of metal oxides, which reduces lattice mismatch and structural defects, improving internal quantum efficiency and emission efficiency by spacing the semiconductor stack from the insulating layer and minimizing the risk of material penetration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the size of light emitting elements is decreased, then the density of light emitting elements is improved, but the emission efficiency deteriorates due to increased non-radiative recombination
Solution Approach 1:
An intermediate passivation structure comprising GaPN is introduced between the semiconductor stack structure and the insulating layer. This intermediate structure acts as a mediator that reduces lattice mismatch and minimizes non-radiative recombination at the interface, thereby maintaining emission efficiency even as the light emitting element size is reduced to increase density.
Solution Approach 2:
The patent employs composite material structures including GaPN intermediate passivation layers combined with metal oxide insulating layers. This composite approach allows optimization of both the semiconductor properties for light emission and the insulating properties for electrical isolation, while the GaPN layer specifically addresses the lattice mismatch issue that becomes critical at smaller dimensions.
2Device complexity
If an insulating layer is directly formed on the semiconductor stack structure, then the manufacturing process is simplified, but structural defects increase due to lattice mismatch
Solution Approach 1:
The GaPN intermediate passivation structure serves as an intermediary layer between the semiconductor stack and the metal oxide insulating layer. This intermediate layer has a crystal structure that bridges the lattice mismatch between GaP-based semiconductors and metal oxide insulators, significantly reducing structural defects and dislocations that would otherwise form at the direct interface.
Solution Approach 2:
The patent changes the material parameter (introducing GaPN with specific composition ratios) to optimize the lattice constant and crystal structure. By adjusting the composition of GaPN, the lattice mismatch is minimized, thereby reducing structural defects while maintaining the necessary electrical insulation properties.
3Reliability
If metal oxide insulating layer is used, then the insulation performance is improved, but material penetration risk increases due to high bonding energy
Solution Approach 1:
The GaPN intermediate passivation layer acts as a protective mediator between the semiconductor stack and the metal oxide insulating layer. Although metal oxides have high bonding energy that could lead to material penetration, the GaPN layer serves as a barrier that prevents direct interaction, thereby reducing the risk of material penetration while maintaining the superior insulation performance of the metal oxide layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the emission efficiency and reduces defect rates, allowing for uniform light output across sub-pixels, particularly in red and blue light emission, while maintaining stability and reducing the risk of structural distortion due to energy supply, thereby improving the overall performance of the light emitting element.
Implementation Method 1
The intermediate passivation structure may comprise a crystal structure comprising nitrogen (N), and a material forming the semiconductor stack structure... The intermediate passivation structure may comprise GaPxN(1-x)... reduces lattice mismatch and structural defects
Implementation Method 2
The metal oxide forming the insulating layer may have a bonding energy greater than a bonding energy of the material forming the semiconductor stack structure... minimizing the risk of material penetration
Implementation Method 3
a semiconductor stack structure comprising an N-type semiconductor layer; a P-type semiconductor layer; and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer
Data Source
AI summary
Provided herein is a light emitting element including a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer; an intermediate passivation structure disposed on a side surface of the semiconductor stack structure; and an insulating layer disposed on the intermediate passivation structure, and including a metal oxide. The intermediate passivation structure includes a crystal structure including nitrogen (N) and material forming the semiconductor stack structure.