Light Emitting Element Insulating Structure for Smoother Separation
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Solution Overview
Problem
Current light emitting elements face challenges in achieving improved step difference at the separation surface, leading to reduced luminous efficiency and increased contact defects in display devices due to surface damage and abnormal profiles during the separation process.
Innovation Solution
The implementation of a light emitting element design featuring a first and second element insulating layer surrounding the core, with a specific outer surface configuration and etching processes to minimize step difference and enhance separation surface quality, including a method of forming a first stacked structure, etching to create a second stacked structure, and further etching to form inclined surfaces and insulating layers for improved separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional light emitting element structure is used, then manufacturing process is simple, but step difference at separation surface is large causing reduced luminous efficiency
Solution Approach 1:
The element insulating layer is divided into a first element insulating layer and a second element insulating layer with different functions. The first layer provides basic insulation, while the second layer specifically addresses the step difference problem at the separation surface, allowing each segment to optimize for its specific purpose.
Solution Approach 2:
The second element insulating layer extends in the thickness direction beyond the first element insulating layer at the separation surface region. This dimensional extension creates an inclined surface that gradually transitions from the element core to the lower substrate, reducing the abrupt step difference.
2Reliability
If conventional separation process is used, then manufacturing process is fast, but surface damage and abnormal profiles occur reducing reliability
Solution Approach 1:
The element insulating layers are formed with specific configurations (inclined surfaces, extended regions) before the separation process. This preliminary structuring of the insulating layers prepares the separation interface to minimize damage and abnormal profiles during the actual separation operation.
Solution Approach 2:
The second element insulating layer acts as a cushioning structure at the separation surface, providing a gradual transition zone that protects the element core from mechanical damage during separation. This protective layer absorbs stress and prevents abrupt contact between the element core and lower substrate.
3Manufacturing precision
If element insulating layer with extended outer surface is formed, then step difference is reduced improving luminous efficiency, but manufacturing complexity increases
Solution Approach 1:
The second element insulating layer is selectively formed only in the separation surface region where step difference occurs, rather than uniformly across the entire element. This localized approach addresses the specific problem area without unnecessarily complicating the entire manufacturing process.
Solution Approach 2:
The second element insulating layer creates a curved or inclined surface profile that gradually transitions from the element core to the lower substrate. This curved transition reduces the abrupt step difference compared to a flat, abrupt interface.
Data Source
AI summary
A light emitting element includes: a light emitting element core including a first semiconductor layer, a light emitting layer on the first semiconductor layer, and a second semiconductor layer on the light emitting layer; and a first element insulating layer surrounding a side surface of the light emitting element core. An outer surface of the first element insulating layer has a first outer surface adjacent to one surface of the first semiconductor layer, the one surface of the first semiconductor layer being opposite to another surface of the first semiconductor layer facing the second semiconductor layer, and a second outer surface farther away from a side surface of the first semiconductor layer than the first outer surface is.