Semiconductor Light Emitter Passivation Structure for Flexible Displays
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Solution Overview
Problem
Current semiconductor light emitting elements in flexible displays face limitations in image quality due to restricted electrode size and ratio, and are prone to damage from external impacts due to their low thickness compared to area, which affects luminous efficiency and durability.
Innovation Solution
A display device with a double passivation layer structure, where the first passivation layer has a uniform thickness and the second passivation layer varies in thickness, allowing for increased area variation of electrodes and enhanced durability by forming a larger outer surface area, thereby improving luminous efficiency and withstanding physical impacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the semiconductor light emitting element is made thin to achieve flexibility, then flexibility is improved, but durability against external impact deteriorates
Solution Approach 1:
The patent introduces a vertical stacking dimension by placing multiple semiconductor light emitting elements on top of each other. This three-dimensional arrangement allows the display to maintain thinness and flexibility while the stacked structure provides enhanced mechanical strength and impact resistance, effectively resolving the contradiction between flexibility and durability.
Solution Approach 2:
The patent employs a composite structure combining multiple semiconductor light emitting elements with different material compositions and optical properties. By stacking elements with varying characteristics (e.g., different phosphor materials, semiconductor layers), the structure achieves both flexibility through thin design and improved durability through the combined mechanical strength of multiple layers.
2Productivity
If the electrode area is increased to improve current supply, then luminous efficiency is improved, but the device complexity increases
Solution Approach 1:
The patent merges multiple electrode structures across stacked semiconductor elements into a unified electrical connection system. By combining the electrode areas of multiple elements and connecting them in parallel or series configurations, the effective current supply area is increased without requiring proportionally more complex control circuitry, thus improving luminous efficiency while managing device complexity.
Solution Approach 2:
The stacked semiconductor elements share common electrode structures and control circuits, allowing a single electrode design to serve multiple functional purposes across different elements. This multi-functionality approach increases the effective electrode area for current supply while avoiding proportional increases in overall device complexity through standardized, reusable components.
3Ease of manufacture
If the semiconductor light emitting element structure is simplified to reduce manufacturing cost, then ease of manufacture is improved, but image quality deteriorates
Solution Approach 1:
The patent segments the display into multiple independent semiconductor light emitting elements that can be manufactured separately using standardized processes. Each element uses simplified, repeatable structures that are easy to manufacture, while the overall image quality is maintained through the precise arrangement and optical design of the stacked elements, resolving the contradiction between manufacturing simplicity and image quality.
Data Source
AI summary
Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.