Light-Emitting Element Insulating Structure to Protect Electrodes
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Solution Overview
Problem
Existing light-emitting elements face challenges in minimizing damage to electrode layers, which can lead to reduced emission efficiency and luminance in display devices.
Innovation Solution
A light-emitting element design that includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer, an electrode layer, an insulating structure with a maximum diameter smaller than the electrode layer, and an insulating film surrounding the semiconductor layers. The insulating structure has a bottom surface contacting the electrode layer and an inclined side surface, minimizing chemical treatment and thus reducing damage to the electrode layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If chemical treatment is used to remove the mask layer, then the mask layer can be completely removed, but the electrode layer is damaged
Solution Approach 1:
The patent extracts the mask layer removal function from the chemical treatment process by designing the insulating structure to serve as the mask layer remainder. The insulating structure is specifically positioned and sized to provide the necessary masking function without requiring complete mask layer removal, thereby eliminating the need for harmful chemical treatments that damage the electrode layer.
Solution Approach 2:
The insulating structure acts as an intermediary between the mask layer and the electrode layer. It provides the necessary insulation and protection functions while avoiding direct contact between the electrode layer and harmful chemical treatments, thus mediating the conflict between mask layer removal and electrode layer protection.
2Reliability
If the insulating structure has a larger diameter, then it provides better insulation coverage, but it increases damage to the electrode layer
Solution Approach 1:
The patent applies local quality by creating a tapered insulating structure with varying diameter. The insulating structure has a larger diameter at the bottom for better insulation coverage and a smaller diameter at the top to minimize electrode layer damage. This local variation in dimensions optimizes both insulation performance and electrode layer protection simultaneously.
3Reliability
If the insulating structure has a vertical side surface, then it provides uniform insulation, but it requires more chemical treatment and increases electrode layer damage
Solution Approach 1:
The patent introduces asymmetry in the insulating structure by designing it with a tapered shape rather than a uniform cylindrical form. The insulating structure has a bottom surface with larger diameter and a top surface with smaller diameter, creating an asymmetric profile that reduces the required chemical treatment area while maintaining insulation effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design enhances the emission efficiency and luminance of the light-emitting element by minimizing electrode layer damage and improving the light-emitting element's integration into display devices, leading to increased light emission from each subpixel.
Implementation Method 1
a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer
Data Source
AI summary
A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.