Light-Emitting Element Perpendicular Side Surface Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing light-emitting elements face issues with misarrangement and reduced luminous efficiency due to improper configuration and etching processes, which affect the performance and reliability of display devices.
Innovation Solution
A light-emitting element design featuring a first semiconductor layer, an active layer, and a second semiconductor layer with specific cross-sectional areas and orientations, along with transparent and reflective electrode layers, is implemented. The manufacturing method includes sequential layering and etching processes to ensure perpendicular side surfaces and optimal cross-sectional areas, preventing misarrangement and enhancing luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional etching processes are used to manufacture light-emitting elements, then manufacturing complexity is reduced, but misarrangement occurs and luminous efficiency decreases
Solution Approach 1:
The patent applies preliminary action by forming a protective film on the active layer before etching, and by designing the etching process to create perpendicular side surfaces in advance. This prevents misarrangement during subsequent manufacturing steps and eliminates the need for complex post-etching alignment corrections, thereby improving arrangement precision without significantly increasing overall manufacturing complexity.
Solution Approach 2:
The patent changes the etching parameters to achieve perpendicular side surfaces on the light-emitting element. By controlling the etching depth and angle parameters, the process creates optimized cross-sectional areas that prevent misarrangement and improve luminous efficiency, resolving the contradiction between manufacturing simplicity and arrangement precision.
2Loss of energy
If improper cross-sectional areas are used for electrode layers, then manufacturing is simpler, but luminous efficiency is reduced
Solution Approach 1:
The patent optimizes the cross-sectional area parameters of the electrode layers by controlling the etching process. The first electrode layer is etched to a first cross-sectional area and the second electrode layer to a second cross-sectional area, with the side surfaces formed perpendicular to the substrate. This parameter optimization improves light extraction efficiency without requiring excessively precise manufacturing tolerances.
3Reliability
If side surfaces are not perpendicular to the electrode layer, then etching process is simpler, but misarrangement occurs
Solution Approach 1:
The patent applies preliminary action by establishing the perpendicular orientation of side surfaces during the etching process itself, rather than requiring subsequent alignment steps. The etching process is designed to create vertical walls that naturally prevent misarrangement, combining manufacturing simplicity with arrangement precision.
Solution Approach 2:
The patent addresses the arrangement precision issue by moving from a two-dimensional planar structure to a three-dimensional structure with perpendicular side surfaces. This dimensional change creates a vertical profile that prevents lateral misarrangement during device assembly and operation.
Data Source
AI summary
A light-emitting element includes: a first semiconductor layer including a first type semiconductor; a second semiconductor layer including a second type semiconductor different from the first type semiconductor; an active layer between one surface of the first semiconductor layer and one surface of the second semiconductor layer; a first electrode layer on another surface of the second semiconductor layer and having a first cross-sectional area; and a second electrode layer on another surface of the first semiconductor layer and having a second cross-sectional area smaller than the first cross-sectional area. A side surface of the light-emitting element defined by the first semiconductor layer, the active layer, the second semiconductor layer, and the second electrode layer is perpendicular to a main surface of the first electrode layer.