Light-Emitting Element Insulating Structure for Downsizing Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current light-emitting elements face challenges in achieving high luminous efficiency and element characteristics, particularly as they are downsized, with risks of damage during manufacturing processes affecting their performance.
Innovation Solution
A light-emitting element design incorporating an N-type semiconductor layer, a P-type semiconductor layer, an active layer, and an insulating layer with a first and second insulating structure, where the first insulating structure includes a metal oxide with higher bond-dissociation energy and ionic radius than the base elements, reducing the risk of damage and improving stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the light-emitting element is downsized to improve display device performance, then the resolution and density of the display improve, but the risk of damage during manufacturing processes increases and luminous efficiency deteriorates
Solution Approach 1:
A first insulating structure comprising a metal oxide layer is introduced as an intermediary between the semiconductor stacked structure and the second insulating structure. This metal oxide layer acts as a protective mediator that prevents damage to the downsized light-emitting element during manufacturing processes such as sputtering, while also improving luminous efficiency by reducing non-radiative recombination at the interface.
2Manufacturing precision
If the light-emitting element is downsized, then the display resolution improves, but the luminous efficiency decreases due to increased surface-to-volume ratio and interface effects
Solution Approach 1:
The metal oxide layer in the first insulating structure serves as an intermediary that passivates interface states and reduces non-radiative recombination pathways. This intermediary layer recovers luminous efficiency in downsized elements by preventing energy loss at the semiconductor-insulator interface, which becomes increasingly significant as the element size decreases.
Solution Approach 2:
The invention changes the material parameter of the insulating layer from conventional materials to metal oxide materials with specific properties (higher bond-dissociation energy and appropriate ionic radius). This parameter change improves the interface quality and reduces non-radiative recombination, thereby maintaining high luminous efficiency even in downsized elements.
3Ease of manufacture
If conventional insulating materials are used, then the manufacturing process is simple, but the semiconductor stacked structure is damaged during manufacturing and element characteristics deteriorate
Solution Approach 1:
The insulating layer is structured as a composite with multiple layers: a first insulating structure comprising a metal oxide layer, a second insulating structure, and optionally a third insulating structure. This composite structure combines the protective benefits of metal oxide with the insulating properties of other materials, providing both structural integrity during manufacturing and proper electrical insulation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances light-emitting efficiency and element characteristics by reducing the risk of damage during manufacturing, allowing for further downsizing while maintaining performance, and improving the stability of the semiconductor stacked structure.
Implementation Method 1
a bond-dissociation energy of an oxide of the first metal element is greater than a bond-dissociation energy of an oxide of the base element
Implementation Method 2
the first insulating structure includes a metal oxide with higher bond-dissociation energy and ionic radius than the base elements, reducing the risk of damage and improving stability
Data Source
AI summary
One or more embodiments of the disclosure provides a light-emitting element including an N-type semiconductor layer, a P-type semiconductor layer, an active layer between the N-type semiconductor layer and the P-type semiconductor layer, and an insulating layer on a semiconductor stacked structure including the N-type semiconductor layer, the P-type semiconductor layer, and the active layer, and including a first insulating structure and a second insulating structure, the first insulating structure being between the semiconductor stacked structure and the second insulating structure and including a metal oxide including two or more metal elements.