Light Sensing Structure for Precise Contactless Particle Positioning
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Solution Overview
Problem
Conventional biological particle selection devices face challenges in accurately moving target biological particles along a predetermined path without contact, requiring further improvements for precise manipulation.
Innovation Solution
A contactless selection device with a light sensing structure and alternating current power, featuring a photoelectric layer with vertical transistors and insulating layers, generates non-uniform electric fields to apply dielectrophoresis forces, allowing for the precise movement of biological particles using emitter pads that mimic a corona discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional biological particle selection devices use electric fields to drive particle movement, then particle manipulation capability is improved, but contactless precision and accuracy deteriorate
Solution Approach 1:
The patent replaces conventional contact-based mechanical particle manipulation with a contactless dielectrophoresis system. Vertical phototransistors generate localized non-uniform electric fields that exert DEP forces on particles without physical contact, achieving both effective manipulation and high precision positioning through field-based control
Solution Approach 2:
The patent introduces light as an intermediary to activate the vertical phototransistors. Light irradiation enables the phototransistors to generate electric fields on demand, allowing precise spatial and temporal control of particle manipulation without direct contact between the actuator and the particle
2Productivity
If conventional devices apply electric fields for particle selection, then particle movement is achieved, but positioning accuracy along predetermined paths deteriorates
Solution Approach 1:
The patent segments the electric field generation into multiple independent vertical phototransistors arranged in arrays. Each phototransistor can be independently activated by light to create localized electric fields, enabling precise positioning of particles along predetermined paths through selective activation of specific segments
Solution Approach 2:
The patent implements dynamic control of particle positioning by enabling real-time activation and deactivation of vertical phototransistors through light irradiation. This dynamic switching capability allows particles to be moved along predetermined paths with high positioning accuracy by sequentially activating different phototransistor segments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and contactless selection and positioning of biological particles by generating electric fields that facilitate their movement through a distribution of emitter pads, improving the precision and efficiency of particle manipulation.
Implementation Method 1
a plurality of dielectrophoresis (DEP) forces to be applied to move the target biological particle through a distribution of the emitter pads and an electric field difference that is generated in the liquid specimen from non-uniform electric fields of the emitter pads
Implementation Method 2
The light sensing structure includes a first substrate, a first electrode layer, a photoelectric layer, and an insulating layer
Data Source
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AI summary
A contactless selection device (100), a light sensing structure (1) thereof, and a biological particle selection apparatus (1000) are provided. The light sensing structure (1) includes a substrate, an insulating layer (14), an electrode layer, and a photoelectric layer (13), the latter two of which are respectively formed on two opposite sides of the substrate. The photoelectric layer (13) includes a plurality of collector regions (1312), a plurality of base regions (1321) respectively formed in the collector regions (1312), and a plurality of emitter regions (1331) that are respectively formed in the base regions (1321). Each of the emitter regions (1331) includes a plurality of emitter pads (1332) formed in the corresponding base region (1321). Each of the base regions (1321), the corresponding collector region (1312), and the corresponding emitter region (1331) are jointly formed as a vertical transistor (130). The insulating layer (14) covers and separates the vertical transistors (130) and an end of each of the emitter pads (1332) is exposed from the insulating layer (14).