Light-Transmitting Capacitor for High Aperture Ratio Semiconductor Devices

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor devices face challenges in achieving a high aperture ratio while increasing capacitance, reducing manufacturing costs, and minimizing off-state current and power consumption, particularly in display devices using oxide semiconductors.

Innovation Solution

A semiconductor device design incorporating a light-transmitting capacitor with a dielectric film between electrodes, where one electrode is a light-transmitting semiconductor film and the other is a light-transmitting conductive film, both formed using oxide semiconductors, to enhance capacitance and aperture ratio, and a reduced number of masks in the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the area of light-blocking conductive film is increased to increase capacitor electrode overlap area, then capacitance is increased, but aperture ratio is lowered and display quality is degraded

Engineering Contradiction:
ImprovecapacitanceVSAvoidaperture ratio
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent applies the principle of optical property changes by using light-transmitting conductive films instead of traditional light-blocking conductive films for capacitor electrodes. The conductive film is designed to transmit light while maintaining electrical conductivity, allowing the capacitor electrodes to overlap over a larger area without blocking light and reducing aperture ratio. This resolves the contradiction by changing the optical characteristics of the conductive material.

Inventive Principle:
Principle #32Color changes

Solution Approach 2:

The patent employs composite material structures by combining light-transmitting conductive films with dielectric films to form capacitor electrodes. The conductive film is formed using specific materials and techniques that provide both electrical conductivity and light transmission properties, enabling the capacitor to achieve high capacitance while maintaining high aperture ratio and display quality.

Inventive Principle:
Principle #40Composite materials

2Ease of manufacture

If conventional capacitor structure with light-blocking film is used, then manufacturing process is simple, but aperture ratio is reduced and display quality is degraded

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidaperture ratio
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent applies multi-functionality by designing the light-transmitting conductive film to serve multiple purposes: it functions as both a conductive electrode material and a light-transmitting layer. This eliminates the need for separate light-blocking films while maintaining capacitor functionality, thereby simplifying the manufacturing process and increasing aperture ratio simultaneously.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent changes the optical properties of the conductive film from light-blocking to light-transmitting, allowing the same film structure to be used without requiring additional light-management layers. This maintains manufacturing simplicity while dramatically improving aperture ratio and display quality.

Inventive Principle:
Principle #32Color changes

3Illumination intensity

If oxide semiconductor film is used for capacitor electrode, then light transmission is improved, but film thickness must be precisely controlled

Engineering Contradiction:
Improvelight transmissionVSAvoidfilm thickness control
Core Design Contradiction:
Illumination intensityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by optimizing the thickness of the oxide semiconductor film to a specific range (5 nm to 100 nm) that balances light transmission and electrical conductivity. By controlling the film thickness within this optimized range, the patent achieves high light transmission while maintaining sufficient conductivity for capacitor operation, and the thickness can be precisely controlled using sputtering or atomic layer deposition techniques.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses composite material structures where the oxide semiconductor film is combined with dielectric films to form the capacitor electrode assembly. This composite structure allows the oxide semiconductor to provide light transmission while the overall structure maintains the required electrical properties, reducing the sensitivity to precise thickness control.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for increased charge capacity, improved display quality, reduced power consumption, and lower manufacturing costs, while maintaining high reliability and low impurity concentrations, thus addressing the limitations of existing technologies.

Implementation Method 1

a dielectric film is provided between a pair of electrodes... In a capacitor, a dielectric film is provided between a pair of electrodes

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS9905585B2Semiconductor device comprising capacitor
Publication Date: 2018.02.27 SEMICON ENERGY LAB CO LTD
  • US9905585B2 patent drawing
  • US9905585B2 patent drawing
  • US9905585B2 patent drawing

AI summary

A semiconductor device in which the aperture ratio and which includes a capacitor with increased charge capacity is provided. A semiconductor device in which the number of masks used in a manufacturing process is reduced and the manufacturing costs are reduced is also provided. An impurity is contained in a light-transmitting semiconductor film so that the semiconductor film functions as one of a pair of electrodes in a capacitor. The other pair of electrodes is formed using a light-transmitting conductive film such as a pixel electrode. Further, a scan line and a capacitor line are provided on the same surface and in parallel to each other. An opening reaching the capacitor line and an opening reaching a conductive film which can be formed in the formation of a source electrode or a drain electrode of the transistor can be formed concurrently in an insulating film.