Liquid Silicon Source Filling for Defect-Free Contact Plugs

Solution Overview

Problem

Existing semiconductor device fabrication methods face challenges in forming defect-free contact plugs within non-uniform contact holes, leading to physical defects like seams and voids, which degrade electrical characteristics.

Innovation Solution

A method involving the formation of a liquid state silicon source material layer within contact holes, followed by annealing processes to create an amorphous silicon layer that is then crystallized into polysilicon contact plugs, ensuring uniform filling and reducing physical defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional coating methods are used to form silicon source material layer, then the process is simple, but gaps and voids form in non-uniform contact holes leading to defective contact plugs

Engineering Contradiction:

Improveuniformity of contact plug fillingVSAvoiddefect-free contact plugs

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the physical state parameter of the silicon source material from solid to liquid, enabling the material to flow and uniformly fill non-uniform contact holes. This parameter change allows the liquid material to adapt to varying hole geometries, eliminating gaps and voids that occur with conventional solid material deposition methods.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs liquid state silicon source material that behaves like a fluid, utilizing fluid dynamics principles to ensure complete and uniform filling of contact holes. The liquid material flows into and fills the non-uniform contact holes, ensuring defect-free contact plug formation through hydraulic-like filling behavior.

Inventive Principle:

Principle #29Pneumatics and hydraulics

2Manufacturing precision

If solid silicon source material is used, then the material is stable, but it cannot uniformly fill non-uniform contact holes

Engineering Contradiction:

Improveuniform filling of contact holesVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent changes the physical state parameter of the silicon source material from solid to liquid, enabling the material to flow and uniformly fill non-uniform contact holes. This parameter change allows the liquid material to adapt to varying hole geometries, eliminating gaps and voids that occur with conventional solid material deposition methods.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transition by maintaining the silicon source material in a liquid state during the coating and annealing processes. This phase transition approach allows the material to flow and fill contact holes uniformly, then transitions to solid state during annealing to form the final contact plug structure.

Inventive Principle:

Principle #36Phase transitions

3Manufacturing precision

If liquid state silicon source material is used, then uniform filling is achieved, but additional process control is needed to manage the liquid state

Engineering Contradiction:

Improveuniformity of contact plug fillingVSAvoidprocess control requirements

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent changes the physical state parameter of the silicon source material from solid to liquid, enabling the material to flow and uniformly fill non-uniform contact holes. This parameter change allows the liquid material to adapt to varying hole geometries, eliminating gaps and voids that occur with conventional solid material deposition methods.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transition by maintaining the silicon source material in a liquid state during the coating and annealing processes. This phase transition approach allows the material to flow and fill contact holes uniformly, then transitions to solid state during annealing to form the final contact plug structure.

Inventive Principle:

Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the formation of contact plugs without gaps or physical defects, enhancing the electrical characteristics of semiconductor devices by ensuring uniform filling of non-uniform contact holes.

Implementation Method 1

performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer

Methodology Applied

Scientific EffectAnnealing: Annealing

Implementation Method 2

crystallizing the amorphous silicon layer and forming contact plugs

Methodology Applied

Scientific EffectCrystallization: Crystallisation

Data Source

PatentUS9543202B2Method of fabricating semiconductor device having contact structures

Publication Date: 2017.01.10 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs.