Lithography Cleaning Liquid for Low-k Material Protection
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Solution Overview
Problem
Conventional cleaning liquids for lithography fail to effectively remove residue materials from etching processes without corroding low dielectric constant materials, requiring multiple steps and compromising the integrity of ultra-Low-k materials.
Innovation Solution
A cleaning liquid comprising an alkali or acid, a solvent, and a silicon compound that generates a silanol group through hydrolysis, which effectively removes residue materials while inhibiting corrosion of low dielectric constant materials in a single step.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a weak alkaline cleaning liquid with lowered pH is used to clean ULK materials, then damage to ULK materials is inhibited, but the ability to remove residue materials is reduced
Solution Approach 1:
The invention changes the chemical parameters of the cleaning liquid by incorporating silicon compounds that generate silanol groups through hydrolysis. This allows the cleaning liquid to maintain a pH that protects ULK materials while the silanol groups provide enhanced residue removal capability, resolving the contradiction between material protection and cleaning effectiveness
Solution Approach 2:
The cleaning liquid uses a composite formulation combining conventional alkaline or acid components with silicon compounds. This composite approach enables the liquid to simultaneously exhibit gentle cleaning properties that protect ULK materials and strong residue removal capabilities through the silanol groups generated by the silicon compounds
2Productivity
If conventional cleaning liquids are used to remove residue materials, then residue removal is effective, but corrosion of low dielectric constant materials occurs
Solution Approach 1:
The silicon compounds act as intermediary substances that generate silanol groups, which serve as a mediating mechanism for residue removal. These silanol groups enable effective cleaning while the overall composition of the cleaning liquid maintains a pH that prevents corrosion of Low-k materials, thus resolving the contradiction between cleaning efficiency and material protection
3Reliability
If multiple steps are used for cleaning and passivating ULK materials, then both cleaning and protection are achieved, but process complexity increases
Solution Approach 1:
The invention merges the cleaning function and the protection function into a single integrated cleaning liquid formulation. The silicon compounds that generate silanol groups provide both cleaning capability and surface passivation in one step, eliminating the need for separate cleaning and passivation steps while maintaining both effectiveness and material protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning liquid achieves excellent corrosion inhibition and residue removal for low dielectric constant materials, enhancing the integrity and stability of semiconductor substrates during the etching process.
Implementation Method 1
a silicon compound generating a silanol group through hydrolysis
Data Source
AI summary
A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.