Semiconductor/Solid-State Device Manufacturing TRIZ Cases

Gas supply parts generate air bubbles below the substrate to mix circulating chemicals, resolving uneven flow rates and by-product precipitation.

A diffusion barrier film and silicide layer form a stable pillar structure on a semiconductor substrate to manage electrical contact properties.

A dicing method creates uncut regions along the outer circumference of disk workpieces to prevent waste chip scattering.

Laminar gas flow and substrate rotation achieve uniform silicon carbide film thickness while minimizing defect density on large area substrates.

Adjustable susceptor gap mechanism prevents contamination in semiconductor reaction systems.

Self-assembled monolayers protect metal contacts during selective dielectric deposition, preventing liner diffusion into contact areas.

Electrostatic chuck via with enlarged end portion connects stacked heating layers to enable flexible electrode arrangement.

Thermal metal halide vapor removes surface oxides without radical damage, lowering interface resistivity in vertically assembled semiconductor devices.

A stretchable display device uses a patterned base and protective layer to cover electrodes.

Simultaneous etching of mask, dielectric, and semiconductor layers enables precise fin structure formation.

A cleaning liquid uses silicon compounds to generate silanol groups for effective residue removal.

Replacing optical glass with a UV-bonded carrier prevents warpage and pad contamination while maintaining high light transmittance.

Composite physical and reactive gases remove exposed metal while preventing particle deposition, achieving high-density gratings with smooth grooves.

Sacrificial mandrels guide conformal spacer deposition to form smooth sidewalls, reducing line edge roughness and improving device reliability at 7 nm nodes.

An embedded electrode tray design resolves insufficient clamping force by using segmented electrodes to stabilize the wafer and prevent contamination.

A blocking layer between the substrate and fins prevents dopant diffusion, reducing leakage current and improving device reliability.

Patterned elastic micro elements on substrate table protrusions reduce contact area, resolving sticking issues that compromise lithographic yield.

Tapered mesas and segmented gates in this power transistor reduce switching losses while maintaining dV/dt controllability.

A substrate cleaning apparatus merges a rotating scrub tool with a two-fluid nozzle to remove polishing debris from wafer back surfaces.

An adhesive framing substrate enables simultaneous grinding of wafers and samples, reducing edge defects and contamination risks during precision thinning.

Cyclic deposition, annealing, and etching heal seams and remove voids in amorphous silicon films.

Anisotropic deposition of an etch stop layer over a semiconductor fin creates varying thicknesses that protect underlying structures during processing.

A silicon oxide layer between the AlN nucleation and silicon substrate suppresses gallium diffusion.

Segmented raised regions reduce parasitic capacitance while lowering external resistance, cutting manufacturing costs via simultaneous epitaxial growth.

A measurement tank stabilizes liquid surfaces through overflow to enable precise pressure sensing in substrate treatment systems.

Extended footing regions in the gate structure prevent substrate recesses during sealing layer etching, maintaining surface integrity.

Selective carbon film deposition creates self-aligned pillars that eliminate lithographic misalignment and improve device yield.

Thinning a semiconductor substrate to define trenches on the opposite side enables precise formation of doped regions and conductive structures within those trenches.

Periodic gas cycling stops chamber exhaust during source introduction to resolve film thickness non-uniformity across multiple substrates.

A polishing pad window with a controlled void structure enables precise endpoint detection during semiconductor manufacturing.

Propylene carbonate electrolyte in electric double layer capacitors supplies sufficient power for large capacity flash memory storage.

A non-contact poling method applies electromagnetic fields to align dipoles in semiconductor intermediate layers without physical contact.

Forming 30 nanometer fins via electron beam lithography reduces gate-leakage current and hysteresis in enhancement-mode high-electron-mobility transistors.

A buried region extends laterally beyond trench corners to shield the gate oxide from high electric fields.

Epitaxial deposition forms a replacement channel with a dopant gradient to boost transistor speed.

A partial etching method protects gate dielectric layers during semiconductor device fabrication.

Segmented drift well and hybrid gate dielectric reduce gate-drain capacitance while maintaining low on-resistance for faster switching speeds.

Self-aligned double patterning transfers dense patterns through hard mask layers to define precise array and peripheral structures.

A laser-perforated carrier film acts as a disposable printing template to create conductor tracks and vias on green ceramic substrates.

A compound semiconductor device uses a rounded triangular corner region to manage electric field distribution within deep trench structures.

A substrate holding device uses independent air supply holes to introduce gas rapidly into the sealed space between the substrate and the holding member.

Segmented exposure masks minimize alignment errors and pattern distortion during step-and-repeat photolithography for semiconductor light extraction.

Horizontal silicon wafer transport with surfactant additives prevents gas bubble adhesion, ensuring uniform chemical etching without shielding defects.

A resist overlayer film composition blocks out-of-band UV and DUV radiation while selectively transmitting EUV light to improve resolution.

Dual nozzles discharge low-surface-tension liquid while inert gas flow prevents moisture contamination, ensuring thorough drying.

Stacked hafnium silicate and aluminum oxide layers reduce equivalent oxide thickness in semiconductor memory devices.

Molecular oxygen curtain gas volumetrically isolates ALD stations, preventing reactant intermixing and parasitic plasma generation.

Segmenting the buffer layer into alternating P-N regions blocks parasitic current flow, reducing OFF-State leakage in PMOS devices.

Laser annealing creates abrupt pn-junctions in semiconductor substrates, reducing drift region width while maintaining reverse blocking voltage.

Angled inlet ports create cross-flow interaction that reduces thickness and compositional non-uniformities in deposited layers.