P-N Junction Superlattice for Quantum Well Parallel Conduction
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Solution Overview
Problem
Positive-type metal oxide semiconductors (PMOS) with quantum wells suffer from low mobility and significant OFF-State leakage current due to parallel conduction, which degrades performance in semiconductor devices.
Innovation Solution
Incorporating a P-N junction superlattice within or adjacent to the buffer layer of quantum well structures, formed using epitaxial growth methods like MBE or CVD, to enhance electrical isolation and reduce parallel conduction by creating multiple defect-free P-N junctions between the quantum well and the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If quantum wells are strained to enhance mobility in PMOS devices, then carrier mobility is improved, but parallel conduction increases leading to higher OFF-State leakage current
Solution Approach 1:
The buffer layer is segmented into multiple alternating P-type and N-type doped regions forming a superlattice structure. This segmentation creates multiple P-N junctions that collectively block parallel conduction paths while allowing the quantum well to maintain strain for high carrier mobility.
Solution Approach 2:
The P-N junction superlattice acts as an intermediary structure between the quantum well and the substrate. It provides electrical isolation by blocking parasitic current flow through the buffer layer while maintaining the strained quantum well's high mobility characteristics.
2Object-generated harmful factors
If a P-N junction superlattice is incorporated to reduce parallel conduction, then OFF-State leakage current is reduced, but device structure and fabrication complexity increase
Solution Approach 1:
The P-N junction superlattice combines multiple doping regions into a single integrated buffer layer structure. This merging approach achieves effective current blocking while maintaining a relatively simple overall device architecture that can be fabricated using standard processes.
Solution Approach 2:
The superlattice structure changes the electrical parameters of the buffer layer by introducing alternating P and N-type doping regions. This parameter modification enables the buffer layer to actively block parallel conduction while maintaining structural integrity and compatibility with existing fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The P-N junction superlattice significantly reduces parallel conduction and OFF-State leakage current, improving the performance of PMOS devices by maintaining high mobility and reducing parasitic current flow.
Implementation Method 1
Incorporating a P-N junction superlattice within or adjacent to the buffer layer of quantum well structures, formed using epitaxial growth methods like MBE or CVD, to enhance electrical isolation and reduce parallel conduction by creating multiple defect-free P-N junctions between the quantum well and the substrate
Implementation Method 2
formed using epitaxial growth methods like MBE or CVD
Data Source
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AI summary
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodimentsmay be described and claimed.