Reprogrammable Logic Memory Using Resistive Cells for Radiation Hardening
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Solution Overview
Problem
Existing reprogrammable logic devices, such as FPGAs, face challenges in protecting configuration data from radiation-induced errors, with existing solutions being complex and energy-consuming.
Innovation Solution
The use of non-volatile memory cells with resistance switching elements, such as thermally assisted switching (TAS) or field-induced magnetic switching (FIMS) elements, to store configuration data, allowing for simple and low-power protection against radiation errors by periodically refreshing the data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If SRAM cells are replaced by DRAM cells with periodic refresh from PROM to protect against radiation errors, then reliability is improved, but device complexity and energy consumption increase
Solution Approach 1:
The patent changes the fundamental parameter of memory cell type from volatile SRAM to non-volatile resistive memory cells. This parameter change eliminates the need for periodic refresh operations and complex control logic, thereby reducing device complexity while maintaining radiation hardness. The non-volatile nature of resistive memory inherently protects against radiation-induced data loss without requiring additional refresh mechanisms.
Solution Approach 2:
The patent extracts and removes the periodic refresh mechanism and PROM-based data storage that characterize the DRAM approach. By using non-volatile resistive memory cells that maintain their state without refresh, the complex refresh control logic and additional memory structures are eliminated, simplifying the overall device architecture while preserving radiation error protection.
2Reliability
If SRAM cells are replaced by DRAM cells with periodic refresh from PROM to protect against radiation errors, then reliability is improved, but energy consumption increases
Solution Approach 1:
The patent changes the memory cell parameter from volatile to non-volatile, eliminating the need for continuous refresh operations. Non-volatile resistive memory cells retain their state without power, dramatically reducing energy consumption while maintaining radiation error protection. This parameter change removes the energy-intensive periodic refresh cycle inherent in DRAM-based solutions.
Solution Approach 2:
The patent eliminates the periodic refresh action required by DRAM cells. By using non-volatile resistive memory, the periodic refresh operations that consume significant energy are removed entirely. The memory cells maintain their state indefinitely without periodic intervention, reducing energy consumption to only what is needed for initial programming and occasional reconfiguration.
3Use of energy by moving object
If non-volatile memory cells with resistance switching elements are used to store configuration data, then energy consumption is reduced and simplicity is improved, but radiation error protection must be maintained
Solution Approach 1:
The patent employs a triple modular redundancy architecture where three identical resistive memory cells store the same configuration data. If one cell suffers radiation-induced damage, the other two intact cells can provide the correct data. This approach uses simple, low-cost non-volatile memory cells in a redundant configuration to maintain reliability while keeping individual cell complexity and power consumption low.
Solution Approach 2:
The patent combines multiple resistive memory cells in a redundant array configuration to create a composite storage system. By aggregating multiple simple non-volatile memory cells with radiation hardening logic, the system achieves high reliability against radiation errors while maintaining the low power consumption and simplicity advantages of individual non-volatile memory cells.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively protects configuration data from radiation-induced errors while maintaining low power consumption and simplicity, ensuring reliable operation of reprogrammable logic devices.
Implementation Method 1
each comprising a first resistor-switching element and a second resistor-switching element
Implementation Method 2
thermally assisted switching (TAS) elements
Implementation Method 3
field-induced magnetic switching (FIMS) elements
Data Source
Figure 1~2
Figure 3A~3C
Figure 3D~4
AI summary
The invention relates to a reprogrammable logic device comprising a plurality of elementary patches, each patch comprising: at least one logic block (108) configurable by one or more volatile memory cells (322) storing configuration data; and a memory (116) comprising: a plurality of non-volatile memory cells (402) storing refresh data, each non-volatile memory cell comprising first and second resistance-switching elements, each being programmable so as to have one of a first and of a second resistance value representative of the refresh data; and a read-write circuit (408) adapted for periodically refreshing the configuration data on the basis of the refresh data.