Low Compressive TiNx Layer for MEMS Structural Stability

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Solution Overview

Problem

Microelectromechanical devices require materials that are both electrically and mechanically superior, but common conductive materials lack the necessary mechanical strength and creep resistance, especially for deformable or deflectable elements like hinges and mirror plates in micromirror devices.

Innovation Solution

A low compressive TiNx layer with specific stress and composition, incorporating oxygen between 0-15%, is deposited using reactive sputtering with low power and high argon-to-nitrogen gas ratios to create a mechanically robust and electrically conductive material for deformable elements in microelectromechanical devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If TiNx layer with high compressive stress is deposited, then electrical conductivity is achieved, but structural stability deteriorates due to curvature and buckling

Engineering Contradiction:
Improveelectrical conductivityVSAvoidstructural stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent applies preliminary anti-action by depositing TiNx material with controlled low compressive stress to counteract the formation of unwanted curvature and buckling. By pre-establishing the correct stress state during deposition, the structural layers maintain flatness and stability, preventing the harmful deformation that would otherwise occur in high-stress TiNx layers.

Inventive Principle:
Principle #9Preliminary anti-action

2Strength

If TiNx material is used for deformable elements, then mechanical strength is improved, but fabrication complexity increases due to stress control requirements

Engineering Contradiction:
Improvemechanical strengthVSAvoidfabrication process complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent performs preliminary action by establishing the correct deposition parameters and stress control measures during the TiNx material deposition process itself. By pre-determining the optimal sputtering conditions, gas ratios, and power levels, the complex stress control requirements are built into the fabrication process from the beginning, rather than requiring additional post-processing steps to manage stress issues.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The TiNx layer achieves reduced stress and enhanced mechanical properties, preventing curvature and buckling, while maintaining electrical conductivity, thus improving the reliability and performance of deformable elements in microelectromechanical devices.

Implementation Method 1

The TiNx layer is deposited using reactive sputtering with a low sputtering rate and low sputtering power

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS7476949B2Low compressive TiNx materials and methods of making the same
Publication Date: 2009.01.13 TEXAS INSTRUMENTS INC
  • US7476949B2 patent drawing
  • US7476949B2 patent drawing
  • US7476949B2 patent drawing

AI summary

Disclosed herein is a microelectromechanical device having a structural layer composed of a low stress TiNx layer and a method of making the same.