Composite Low-k Dielectric Stack for Stable Trench Patterning

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Solution Overview

Problem

Current low-k dielectric materials used in semiconductor manufacturing lack ideal hardness and strength, leading to unbalanced stresses during patterning processes, which cause deformation and critical dimension mismatch issues, affecting the integrity of interconnects.

Innovation Solution

A multi-layer structure comprising a first porous dielectric layer with a low k-value, an insert layer with higher hardness and K-value for additional structural support, and a second dielectric layer, where the insert layer helps mitigate stress and maintain the shape of openings during etching processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If low-k dielectric materials are used to reduce RC delay, then signal propagation performance is improved, but material hardness and strength deteriorate

Engineering Contradiction:
Improvesignal propagation performanceVSAvoidmaterial hardness
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent uses a composite dielectric structure consisting of a first dielectric layer (lower k-value), a second dielectric layer (higher k-value), and an insert layer (higher hardness). This composite structure combines materials with different properties to simultaneously achieve low RC delay and sufficient mechanical strength. The insert layer specifically provides the needed hardness support while the dielectric layers maintain signal propagation performance.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The insert layer is strategically positioned between the first and second dielectric layers to provide localized mechanical support where needed. This local reinforcement approach allows the low-k dielectric materials to be used in regions where signal propagation is critical, while the harder insert layer provides structural support in regions where mechanical strength is needed during patterning processes.

Inventive Principle:
Principle #3Local quality

2Reliability

If low-k dielectric materials are used to reduce parasitic capacitance, then RC delay is reduced, but stress balance during patterning deteriorates

Engineering Contradiction:
ImproveRC delayVSAvoidstress balance
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The insert layer acts as a counterbalancing element that compensates for the stress imbalance caused by using soft low-k dielectric materials. The higher hardness of the insert layer provides the mechanical counterweight needed to maintain stress balance during patterning processes, preventing deformation of the dielectric layers while allowing the low-k materials to reduce RC delay.

Inventive Principle:
Principle #8Anti-weight (Counterweight)

Solution Approach 2:

The three-layer composite structure (first dielectric layer + insert layer + second dielectric layer) creates a balanced stress distribution. The combination of softer dielectric layers with lower RC delay and the harder insert layer with better mechanical properties results in a composite structure that maintains stress balance during manufacturing processes.

Inventive Principle:
Principle #40Composite materials

3Stability of the object's composition

If insert layer with higher hardness is added to support dielectric layers, then structural stability is improved, but device complexity increases

Engineering Contradiction:
Improvestructural stabilityVSAvoidlayer structure complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The dielectric structure is segmented into three distinct functional layers: a first dielectric layer for stress management, an insert layer for mechanical support, and a second dielectric layer for additional structural stability. This segmentation allows each layer to be optimized for its specific function, with the insert layer providing targeted hardness support without requiring complete restructuring of the entire device.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insert layer is implemented as a localized reinforcement between the dielectric layers rather than throughout the entire structure. This localized approach provides the necessary structural stability at the critical interface region while minimizing the overall complexity increase, as the insert layer only needs to be present where stress concentration occurs during patterning.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12166128B2Multi-layer film device and method
Publication Date: 2024.12.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12166128B2 patent drawing
  • US12166128B2 patent drawing
  • US12166128B2 patent drawing

AI summary

A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.