Chemically Amplified Resist with Low-Oligomer Polymer for Defect Reduction
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Solution Overview
Problem
Existing chemically amplified resist compositions face challenges in achieving favorable resolution, pattern profile, and line edge roughness while simultaneously suppressing development-residue defects, which can cause mask defects in semiconductor manufacturing processes, particularly at the 14-nm node and beyond.
Innovation Solution
A chemically amplified resist composition is developed with a polymer compound comprising repeating units polymerized from polymerizable monomers containing not more than 1000 ppm of residual oligomers in the form of dimer to hexamer, eliminating the need for additional purification steps and enhancing the resist's ability to suppress development-residue defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional polymer compounds are used in chemically amplified resist compositions, then the resist can be manufactured with standard processes, but development-residue defects occur that cause mask defects and lower yield
Solution Approach 1:
The patent applies preliminary action by removing oligomer components from the polymer compound before the resist composition is used. The polymer compound is purified to remove oligomers that would otherwise cause development-residue defects during the lithography process, preventing the problem before it occurs in the final application.
Solution Approach 2:
The patent applies the extraction principle by specifically removing oligomer components (dimers, trimers, tetramers, pentamers, and hexamers) from the polymer compound. This extraction of harmful low-molecular-weight components eliminates the source of development-residue defects while preserving the desired polymer properties.
2Object-generated harmful factors
If additional purification steps are added to remove oligomers from polymer compounds, then development-residue defects are suppressed, but manufacturing complexity and process time increase
Solution Approach 1:
The patent performs oligomer removal as a preliminary action during polymer compound synthesis, before the resist composition is formulated. This timing allows for efficient removal using methods like precipitation, extraction, or chromatography while the polymer is still in a manageable state, reducing overall process complexity compared to later purification steps.
Solution Approach 2:
The patent applies parameter changes by controlling the polymerization conditions to minimize oligomer formation in the first place, or by adjusting solvent systems and temperature parameters during purification to selectively remove oligomers. These parameter optimizations make the purification process more efficient and less complex.
3Object-generated harmful factors
If polymer compounds with low oligomer content are used, then development-residue defects are reduced, but manufacturing cost and process time increase due to additional purification
Solution Approach 1:
The oligomer removal is performed as a preliminary step during polymer synthesis rather than as a separate post-processing step. This integration allows for time-efficient removal using rapid methods like precipitation or liquid-liquid extraction, reducing the total time loss compared to conventional sequential purification approaches.
Solution Approach 2:
The patent employs simple, cost-effective purification methods such as precipitation with non-solvents or basic filtration that can be performed quickly without requiring expensive equipment or complex procedures. These disposable-like simple steps efficiently remove oligomers without significant time or cost penalty.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves favorable resolution, pattern profile, and line edge roughness while reducing development-residue defects, thereby improving yield in semiconductor manufacturing processes.
Implementation Method 1
an acid generator which is decomposed by exposure light to generate an acid
Implementation Method 2
a basic compound is normally added to control diffusion of acid generated by light exposure
Data Source
AI summary
A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.