Lower Electrode Pillar Structure for Dense Stable Semiconductor Arrays
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high integration density and structural stability due to limitations in pattern width reduction and electrode connection methods, which affect their performance and manufacturing efficiency.
Innovation Solution
The semiconductor device incorporates lower electrodes with pillar shapes and protrusions connected by support patterns, where the protrusions are doped with impurities, and a dielectric layer covers the electrodes and support patterns, enhancing structural stability and integration density through precise etching and doping processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If electrode widths are reduced to increase integration density, then integration density is improved, but structural stability deteriorates due to insufficient support and connection between electrodes
Solution Approach 1:
The electrode structure is segmented into a pillar portion and a protrusion portion, where the protrusion extends from the sidewall of the pillar to contact the support pattern. This segmentation allows the electrode to maintain electrical function while the protrusion provides additional mechanical support and connection area, resolving the contradiction between reduced electrode width and structural stability.
Solution Approach 2:
The electrode structure transitions from a simple planar width reduction to a three-dimensional structure with vertical pillars and lateral protrusions. By utilizing the vertical dimension and sidewall area, the design maintains structural integrity while allowing closer spacing between electrodes, thereby achieving higher integration density without sacrificing stability.
2Ease of manufacture
If conventional electrode connection methods are used, then manufacturing process is simple, but connection reliability deteriorates leading to device performance degradation
Solution Approach 1:
The electrode and support pattern are merged through direct physical contact via the protrusion structure. The protrusion extends from the electrode sidewall to contact the support pattern, creating a unified mechanical and electrical connection that enhances reliability while maintaining manufacturing simplicity through a single integrated structure.
Solution Approach 2:
The protrusion structure provides localized enhancement of connection quality at specific contact points between the electrode and support pattern. By concentrating the connection function at the protrusion-tip interface rather than relying on broad surface contact, the design achieves high connection reliability with minimal additional manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the structural stability and integration density of semiconductor devices by firmly connecting the electrodes and support patterns, preventing undercuts during etching and allowing for reduced electrode widths, thereby enhancing manufacturing efficiency and device performance.
Implementation Method 1
the protrusion includes a same conductive material as the pillar portion and is further doped with impurities
Data Source
AI summary
A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.