LTPO Display Substrate Layout That Protects Oxide TFT Active Layers
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Solution Overview
Problem
Existing manufacturing methods for low temperature polycrystalline oxide (LTPO) display substrates face challenges in maintaining the stability of the active layer of oxide thin film transistors due to contamination and corrosion issues during the patterning and etching processes.
Innovation Solution
The proposed solution involves a method for manufacturing a display substrate that includes forming a first thin film transistor with a specific structure, where the active layer is formed after the gate and gate insulating layers, and using oxide semiconductor materials for the active layer. This approach reduces the risk of contamination and corrosion by ensuring the active layer is protected during the formation of the gate and gate insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the active layer is formed before the gate and gate insulating layers in conventional manufacturing, then the patterning and etching processes can proceed, but the active layer is exposed to contamination and corrosion during these processes
Solution Approach 1:
The gate and gate insulating layers are formed in advance before the active layer is created. This preliminary formation of protective layers establishes a barrier structure that prevents subsequent contamination and corrosion of the active layer during patterning and etching processes.
Solution Approach 2:
The gate insulating layer acts as a protective cushion formed beforehand to shield the active layer from harmful effects. This pre-formed insulating layer absorbs or resists the contamination and corrosion that would otherwise directly affect the active layer during manufacturing processes.
2Reliability
If the active layer is formed after the gate and gate insulating layers, then contamination and corrosion are reduced, but additional manufacturing steps are required
Solution Approach 1:
The formation of the active layer is merged with the gate electrode formation process. The active layer is patterned and formed in the same manufacturing step as the gate electrode, utilizing the already-formed gate insulating layer as a base. This integration reduces the number of separate steps while maintaining the protective sequence.
Solution Approach 2:
The gate insulating layer serves multiple functions: it acts as an insulator for the gate electrode, provides protection against contamination and corrosion, and serves as a foundation for forming the active layer. This multi-functionality reduces the need for additional dedicated protective layers or steps.
3Ease of manufacture
If conventional manufacturing sequences are used, then the process is simpler, but leakage currents increase due to active layer contamination
Solution Approach 1:
The gate structure and insulating layer are formed preliminarily before the active layer is created. This preliminary formation establishes a clean, protected environment that prevents contamination-induced leakage currents while maintaining manufacturing simplicity through integrated process steps.
Data Source
AI summary
The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, belongs to the field of display technology. The method includes forming a first thin film transistor, which includes: forming a first gate of the first thin film transistor on a base substrate through a patterning process; forming a first gate insulating layer on a side of the first gate distal to the base substrate; sequentially forming a first semiconductor material layer, a second gate insulating layer and a second gate metal layer on a side of the first gate insulating layer distal to the base substrate, and forming a pattern including an active layer of the first thin film transistor, a pattern of the second gate insulating layer and a second gate of the first thin film transistor through a patterning process.