Magnetic Device with Segmented Regions for High-Density Memory
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Solution Overview
Problem
Current magnetic devices face challenges in increasing density and complexity, particularly in logic circuit and memory devices, due to limitations in magnetic material configurations and resistance changes, which affect their operational efficiency and scalability.
Innovation Solution
A magnetic device configuration featuring a conductive extending magnetic portion with changeable magnetization, an inserted magnetic portion, and an intermediate portion, utilizing materials with perpendicular magnetic anisotropy, allows for controlled magnetization and resistance changes based on current direction, enabling high-density and scalable designs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional magnetic material configurations are used, then device structure is simple, but density and scalability are limited
Solution Approach 1:
The magnetic device is divided into distinct functional regions: a first magnetic region with first magnetization, a second magnetic region with second magnetization, and an inserted magnetic portion with third magnetization. This segmentation allows each region to contribute differently to the overall device performance, enabling higher density while maintaining manageable complexity through modular design.
Solution Approach 2:
The patent introduces a stacking direction that intersects with the extending direction of magnetic regions, creating a three-dimensional magnetic structure. This dimensional transition from planar to vertical stacking enables increased device density by utilizing space in multiple directions rather than being constrained to a single plane.
2Reliability
If magnetic regions are extended in one direction, then magnetization control is simplified, but resistance change and operational efficiency are reduced
Solution Approach 1:
Different magnetic regions are assigned different magnetization properties: the first magnetic region has first magnetization, the second magnetic region has second magnetization, and the inserted magnetic portion has third magnetization. This local differentiation of magnetic properties allows each region to be optimized for specific functions, improving operational efficiency while the overall configuration remains systematic rather than chaotic.
Solution Approach 2:
The inserted magnetic portion acts as an intermediary element between the first and second magnetic regions. This intermediate structure facilitates controlled interaction between the different magnetic regions, enabling precise resistance change control and improved operational efficiency while maintaining a structured configuration that doesn't excessively increase complexity.
3Productivity
If simple magnetic structures are used, then manufacturing is easier, but scalability to high-density designs is limited
Solution Approach 1:
The magnetic device is divided into distinct functional regions: a first magnetic region with first magnetization, a second magnetic region with second magnetization, and an inserted magnetic portion with third magnetization. This segmentation allows each region to be optimized independently for scalability while maintaining a systematic structure that can be manufactured using established processes.
Solution Approach 2:
The patent introduces a stacking direction that intersects with the extending direction of magnetic regions, creating a three-dimensional magnetic structure. This dimensional transition from planar to vertical stacking enables increased device density by utilizing space in multiple directions rather than being constrained to a single plane.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables high-density magnetic devices with improved scalability and operational efficiency by controlling magnetization and resistance changes, facilitating advanced logic circuits and memory applications.
Implementation Method 1
When a current I1 flows in the first extending magnetic portion 11 in a first direction, a spin transfer torque acts on the first magnetic region 11a. Thereby, the first magnetization 11am of the first magnetic region 11a is changed.
Implementation Method 2
When a current I3 flows between the first extending magnetic portion 11 and the first conductive portion 51, a magnetoresistive effect occurs between the first magnetic region 11a and the first inserted magnetic portion 21.
Data Source
AI summary
According to one embodiment, a magnetic device includes a first extending magnetic portion, a first conductive portion, a first inserted magnetic portion, and a first intermediate portion. The first extending magnetic portion is conductive, and includes a first magnetic region and a second magnetic region. The first magnetic region extends in a first extending direction, includes a first part, and has a first magnetization being changeable. The second magnetic region extends in the first extending direction, having a magnetization being changeable and different form the first magnetization. The first conductive portion is provided apart from the first part in a stacking direction intersecting the first extending direction. The first inserted magnetic portion is provided between the first conductive portion and the first part, and has a second magnetization being changeable. The first intermediate portion is provided between the first part and the first inserted magnetic portion.