Magnetic Layer for Semiconductor Light-Emitting Device
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Solution Overview
Problem
Semiconductor light-emitting devices face challenges in enhancing light extraction efficiency due to low probabilities of electron-hole recombination, which limits their luminance and lifespan.
Innovation Solution
A magnetic field is applied to confine electrons and holes in the active layer of the semiconductor light-emitting device, increasing the probability of electron-hole recombination by generating a force parallel to the active layer surface, thereby improving light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a magnetic layer is added to generate a magnetic field for confining electrons and holes, then the probability of electron-hole recombination is improved, but the device complexity increases
Solution Approach 1:
The patent applies a magnetic field by introducing a magnetic layer to change the physical state of charge carriers. By adjusting the magnetic field strength and direction (parameter changes), electrons and holes are confined in the active layer, increasing their residence time and recombination probability without fundamentally changing the device architecture
Solution Approach 2:
The magnetic layer serves as an intermediary element that mediates the interaction between external magnetic fields and charge carriers. This intermediary structure enables field application while maintaining electrical isolation and structural integrity, resolving the contradiction between adding functionality and increasing complexity
2Productivity
If the magnetic field is applied parallel to the active layer surface, then the light extraction efficiency is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The magnetic layer is positioned locally adjacent to the active layer rather than requiring uniform field application across the entire device. This localized approach allows the magnetic field to be effectively applied only where needed for carrier confinement, reducing the overall manufacturing precision requirements while maintaining high light extraction efficiency
Solution Approach 2:
The patent transitions from considering only in-plane magnetic field orientations to utilizing out-of-plane orientations. By applying the magnetic field in a different dimensional orientation (perpendicular to the active layer surface), the design achieves effective carrier confinement with relaxed precision requirements compared to strict in-plane alignment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The application of a magnetic field effectively increases the probability of electron-hole recombination, enhancing the light extraction efficiency and overall performance of semiconductor light-emitting devices.
Implementation Method 1
The magnetic layer may be configured to generate a magnetic field having a magnetic field direction at the active layer, the magnetic field direction at the active layer being substantially parallel to the upper surface of the active layer
Implementation Method 2
applying a magnetic field to confine electrons and holes in an active layer using a force generated by the magnetic field
Data Source
AI summary
A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.