Magnetic Logic Stack Layout for Low-Power XNOR and OR Circuits

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Solution Overview

Problem

Current arithmetic circuits with magnetic devices are complex and require a simpler configuration to enhance efficiency and reduce power consumption, particularly for operations like XNOR and OR logic gates.

Innovation Solution

A magnetic device comprising conductive portions with magnetic layers and a controller that implements initialization, operation, and XNOR operations by controlling current orientations and potentials, simplifying the structure and sequence for these operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If conventional magnetic devices are used in arithmetic circuits, then the circuit can perform logic operations, but the configuration becomes complex and power consumption increases

Engineering Contradiction:
Improveconfiguration complexityVSAvoidpower consumption
Core Design Contradiction:
Device complexityVSUse of energy by moving object

Solution Approach 1:

The patent combines multiple magnetic layers (first magnetic layer, second magnetic layer, third magnetic layer) into a single integrated magnetic device structure that performs both storage and logic operations. The first and second stacked bodies are merged into one device with shared conductive portions, reducing overall configuration complexity while maintaining functionality.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The magnetic device is designed to perform multiple functions including XNOR operations, OR operations, and data storage within a single unified structure. The same magnetic layers and conductive portions are used across different operations, eliminating the need for separate dedicated circuits for each function and thereby reducing power consumption and complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Device complexity

If conventional magnetic devices are used in arithmetic circuits, then the circuit can perform logic operations, but the structure becomes complex

Engineering Contradiction:
Improvestructural complexityVSAvoidoperation efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent merges the first stacked body (with first and second magnetic layers) and the second stacked body (with third and fourth magnetic layers) into a single integrated structure. The conductive portions are shared between stacked bodies, simplifying the overall structure while enabling efficient XNOR and OR operations through coordinated magnetization control.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The magnetic device is segmented into distinct functional regions (first stacked body, second stacked body, conductive portions) that can be independently controlled. This segmentation allows for optimized current paths and magnetization control for different logic operations, improving operational efficiency without increasing overall structural complexity.

Inventive Principle:
Principle #1Segmentation

3Device complexity

If simplified magnetic device configuration is implemented, then structure becomes simpler, but operational precision may be affected

Engineering Contradiction:
Improveconfiguration simplicityVSAvoidoperation precision
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent applies different magnetic layer configurations to different regions of the device. The first stacked body has a specific arrangement of magnetic layers optimized for certain operations, while the second stacked body has a complementary arrangement. This local differentiation maintains operational precision despite overall structural simplification.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The device utilizes changes in magnetization orientation (parallel or antiparallel alignment) as a key parameter to distinguish logic states. By precisely controlling the relative magnetization directions of adjacent magnetic layers through applied currents, the simplified structure achieves accurate logic operation results without compromising precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables a more efficient and simplified implementation of XNOR and OR logic operations, reducing power consumption and complexity in arithmetic circuits, making them suitable for applications like Binary Neural Networks.

Implementation Method 1

a first magnetic layer and a second magnetic layer; a third magnetic layer and a fourth magnetic layer

Methodology Applied
Scientific EffectMagnetization: Magnetism

Implementation Method 2

The first conductive portion includes a first region, a second region, a third region between the first region and the second region

Methodology Applied
Scientific EffectSpin transfer torque:

Data Source

PatentUS11990168B2Magnetic device and arithmetic device
Publication Date: 2024.05.21 SP AITH LTD
  • US11990168B2 patent drawing
  • US11990168B2 patent drawing
  • US11990168B2 patent drawing

AI summary

According to one embodiment, a magnetic device includes first and second conductive portions, first and second stacked bodies, and a controller. The first conductive portion includes first to third region. The third region is between the first and second regions. The first stacked body includes first and second magnetic layers. The second magnetic layer is between the third region and the first magnetic layer. The second conductive portion includes fourth to sixth regions. The sixth region is between the fourth and fifth regions. The second stacked body includes third and fourth magnetic layers. The fourth magnetic layer is between the sixth region and the third magnetic layer. The first stacked body is configured to be in a first low or high electrical resistance state. The second stacked body is configured to be in a second low high electrical resistance state.