Magnetic Memory Tracks with Synthetic Antiferromagnetic Coupling

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Solution Overview

Problem

Existing magnetic memory devices face challenges in stabilizing the position of magnetic domain walls and require high current densities for domain wall movement, which affects their operational efficiency and reliability.

Innovation Solution

A magnetic memory device with a synthetic antiferromagnetic structure, comprising a lower and upper magnetic layer antiferromagnetically coupled by a spacer layer, and non-magnetic patterns that stabilize domain wall positions and reduce current density through spin-orbit torque and Dzyaloshinskii-Moriya interaction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a magnetic track includes a synthetic antiferromagnetic structure with upper and lower magnetic layers antiferromagnetically coupled by a spacer layer, then the position of magnetic domain walls can be controlled more stably, but the device complexity increases

Engineering Contradiction:

Improvestability of domain wall positionVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The magnetic track is segmented into multiple magnetic layers (upper and lower magnetic layers) separated by a spacer layer. This segmentation allows independent control of each layer's magnetic properties while achieving stable domain wall positioning through the antiferromagnetic coupling between layers.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The magnetic track uses a composite structure combining ferromagnetic materials (upper and lower magnetic layers) with a non-magnetic spacer layer. This composite material approach enables antiferromagnetic coupling that provides stable domain wall positioning while managing the complexity through material property optimization.

Inventive Principle:

Principle #40Composite materials

2Device complexity

If conventional magnetic memory devices are used, then the structure is simpler, but high current densities are required to move magnetic domain walls

Engineering Contradiction:

Improvestructure simplicityVSAvoidcurrent density

Core Design Contradiction:

Device complexityVSUse of energy by moving object

Solution Approach 1:

The invention changes the magnetic structure parameters by introducing antiferromagnetic coupling between upper and lower magnetic layers. This parameter change modifies the domain wall properties and reduces the current density required for domain wall movement, achieving lower energy consumption while maintaining structural organization.

Inventive Principle:

Principle #35Parameter changes

3Object-affected harmful factors

If external magnetic fields are present, then magnetic domain walls are influenced by these fields, but the position control becomes less stable

Engineering Contradiction:

Improveinfluence of external magnetic fieldsVSAvoidposition control stability

Core Design Contradiction:

Object-affected harmful factorsVSReliability

Solution Approach 1:

The spacer layer acts as an intermediary between the upper and lower magnetic layers, mediating the antiferromagnetic coupling. This intermediary structure isolates the domain walls from external magnetic field influences while maintaining stable position control through the coupled magnetic layer system.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device achieves stable control over domain wall positions and reduces current density, enhancing operational stability and efficiency by minimizing the influence of external factors like magnetic fields.

Implementation Method 1

non-magnetic patterns that stabilize domain wall positions and reduce current density through spin-orbit torque and Dzyaloshinskii-Moriya interaction

Methodology Applied

Scientific EffectSpin-orbit torque:

Implementation Method 2

non-magnetic patterns that stabilize domain wall positions and reduce current density through spin-orbit torque and Dzyaloshinskii-Moriya interaction

Methodology Applied

Scientific EffectDzyaloshinskii-Moriya interaction:

Data Source

PatentUS12457908B2Magnetic memory devices

Publication Date: 2025.10.28 SAMSUNG ELECTRONICS CO LTD

AI summary

A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.