Magnetic Memory Device With Nitrogen-Containing Coupling Layer

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Solution Overview

Problem

Existing magnetic memory devices face challenges in achieving high-speed writing, low power consumption, and long life due to insufficient exchange coupling between magnetic layers, particularly in magnetoresistance effect elements.

Innovation Solution

Incorporating a nitrogen-containing layer between adjacent layers of the reference and shift canceling layers in a magnetic memory device, enhancing exchange coupling and improving the magnetic memory device's performance by reducing write current and increasing coupling magnitude.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a conventional magnetic memory device structure is used, then the device can operate, but the exchange coupling between magnetic layers is insufficient resulting in high write current and low speed

Engineering Contradiction:

Improvewriting speedVSAvoidwrite current

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent changes the material composition parameter of the reference layer by incorporating a nitrogen-containing layer, which fundamentally alters the magnetic properties and exchange coupling strength, enabling high-speed writing with reduced write current

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses a composite structure combining cobalt layers with a nitrogen-containing layer in the reference layer, where the composite material exhibits enhanced exchange coupling properties that resolve the contradiction between writing speed and energy consumption

Inventive Principle:

Principle #40Composite materials

2Reliability

If exchange coupling between magnetic layers is weak, then the device structure is simple, but the magnetoresistance effect is insufficient leading to poor performance

Engineering Contradiction:

Improvemagnetoresistance effectVSAvoidlayer structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by introducing a nitrogen-containing layer specifically in the reference layer adjacent to the spacer layer, where this localized modification maximizes the exchange coupling effect without requiring complex changes throughout the entire device structure

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The nitrogen-containing layer acts as an intermediary between the cobalt layers and the spacer layer, mediating the exchange coupling interaction and enhancing the magnetoresistance effect through its unique magnetic properties

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution results in a magnetic memory device with high-speed writing, low power consumption, and extended lifespan by increasing exchange coupling between magnetic layers.

Implementation Method 1

Methodology Applied

Scientific EffectExchange coupling: Magnetism

Data Source

PatentUS20250301914A1Magnetic memory device

Publication Date: 2025.09.25 KIOXIA CORP

AI summary

According to one embodiment, a magnetic memory device includes first, second and third magnetic layers having variable, fixed and fixed magnetization directions, respectively, a nonmagnetic layer, and a spacer layer. The second magnetic layer is between the first and third magnetic layers, the nonmagnetic layer is between the first and second magnetic layers, the spacer layer is between the second and third magnetic layers, the second magnetic layer includes a layer adjacent to the spacer layer and including a first layer portion formed of Co and a second layer portion containing N, the third magnetic layer includes a layer adjacent to the spacer layer and including a first layer portion formed of Co.