Multilayer Magnetic Memory Track for Low-Current Domain Wall Injection
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Solution Overview
Problem
Existing magnetic memory devices face challenges in efficiently injecting magnetic domain walls with high current densities, which can be detrimental to device performance and efficiency.
Innovation Solution
A magnetic memory device design incorporating a synthetic antiferromagnetic structure with a non-magnetic pattern having an inclined junction surface, reducing the current density required for injecting magnetic domain walls by optimizing the magnetic track configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional magnetic memory device structures are used, then magnetic domain walls can be injected into the magnetic track, but high current densities are required which are detrimental to device performance and efficiency
Solution Approach 1:
The patent introduces a non-magnetic pattern with an asymmetric structure where one surface has a larger area than the other surface. This asymmetric geometry creates an uneven magnetic field distribution that facilitates easier domain wall injection, thereby reducing the current density required and improving device efficiency while maintaining the magnetic track's functionality.
Solution Approach 2:
The non-magnetic pattern is positioned locally adjacent to the magnetic track rather than uniformly distributed. This localized placement creates specific regions with modified magnetic properties that assist domain wall injection only where needed, reducing overall current requirements without affecting the entire magnetic track structure.
2Use of energy by moving object
If a non-magnetic pattern with asymmetric surface areas is introduced, then current density for injecting magnetic domain walls is reduced, but device structure complexity increases
Solution Approach 1:
The patent extracts a non-magnetic material pattern from the conventional uniform magnetic track structure. By removing magnetic material and replacing it with a non-magnetic pattern having asymmetric surfaces, the design simplifies the overall configuration while achieving the desired current density reduction, rather than adding complex multi-layer structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design reduces the current density needed for injecting magnetic domain walls, enhancing the efficiency and performance of the magnetic memory device.
Implementation Method 1
The lower magnetic layer and the upper magnetic layer may be antiferromagnetically coupled to each other by the spacer layer
Implementation Method 2
a magnetic memory device using a movement phenomenon of a magnetic domain wall of a magnetic material has been researched and developed
Data Source
AI summary
A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.