Magnetic Memory Domain Wall Control via Voltage
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Solution Overview
Problem
Magnetic memories with domain walls shifted by current face issues with shift errors due to inadequate control over domain wall movement.
Innovation Solution
A magnetic memory design featuring a cylindrical magnetic member with regions and narrow portions, where a nonmagnetic conductor is disposed within the member, and a voltage is applied between the magnetic member and the conductor to control domain wall movement, preventing shift errors by manipulating magnetic anisotropy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a current is flowing through the magnetic member to move domain walls, then domain wall movement is achieved, but shift errors occur due to inadequate control over domain wall movement
Solution Approach 1:
The patent applies voltage control to change the magnetic anisotropy energy barrier parameter of the magnetic member. By adjusting the voltage applied to the nonmagnetic conductor, the magnetic anisotropy is modified to prevent unintended domain wall movement, thereby eliminating shift errors while maintaining controlled domain wall shifting capability
Solution Approach 2:
A nonmagnetic conductor is introduced as an intermediary element between the electrical wiring and the magnetic member. This conductor serves as a mediator that converts electrical voltage into magnetic anisotropy control, enabling precise domain wall movement control without direct electrical connection to the magnetic material
2Reliability
If voltage is applied to control magnetic anisotropy and prevent shift errors, then shift error prevention is achieved, but voltage requirement increases
Solution Approach 1:
The patent optimizes the voltage parameter by changing the magnetic anisotropy energy barrier through controlled voltage application. The voltage is adjusted to the minimum necessary level to achieve reliable domain wall positioning, preventing shift errors while minimizing energy consumption
Solution Approach 2:
The nonmagnetic conductor is strategically positioned at specific locations within the magnetic member structure where it can most effectively influence magnetic anisotropy. This localized placement ensures that voltage is applied efficiently at critical points to prevent shift errors without requiring high voltage throughout the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents shift errors by efficiently using electric flux to control domain wall movement, even in highly integrated magnetic memories, with a relatively smaller voltage requirement.
Implementation Method 1
Magnetic memories in which domain walls of a magnetic member are moved (shifted) by a current flowing through the magnetic member are known
Implementation Method 2
a voltage is applied between the magnetic member and the conductor to control domain wall movement, preventing shift errors by manipulating magnetic anisotropy
Data Source
AI summary
A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a nonmagnetic conductor extending in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in the first direction from the first portion to the second portion to surround the nonmagnetic conductor; an insulation portion disposed between the nonmagnetic conductor and the first magnetic member; and a controller electrically connected to the nonmagnetic conductor, the first wiring, and the second wiring.