Magnetic Memory Domain Wall Pinning via Energy Gradient
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Solution Overview
Problem
Magnetic domain walls in existing magnetic memory technologies are unstable and prone to movement when driven by a power supply, leading to data instability and potential loss, as they cannot be reliably pinned to a specific position.
Innovation Solution
A write apparatus and magnetic memory system where the magnetic storage track includes multiple domains with an information buffer of the same size, positioned between adjacent magnetic domain walls, using different magnetic materials with varying magnetic energies to stabilize the domain walls, ensuring data remains pinned without moving to adjacent domains.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a magnetic domain wall is driven by a power supply to write data, then storage speed is improved, but data stability deteriorates because the domain wall cannot be pinned and may move to another magnetic domain
Solution Approach 1:
The patent introduces a pinning layer with specific magnetic properties positioned at predetermined locations within the magnetic memory structure. This pinning layer creates localized regions of high magnetic anisotropy that selectively pin domain walls at specific positions. The local quality change allows domain walls to be stable at pinning locations while remaining movable in other regions, resolving the contradiction between speed and stability.
Solution Approach 2:
The patent modifies magnetic parameters by introducing a pinning layer with different magnetic anisotropy characteristics than the storage layers. By changing the magnetic energy landscape through this additional layer, the system achieves both movable domain walls (for fast writing) and pinned domain walls (for stable data retention). The parameter change in magnetic anisotropy enables simultaneous achievement of speed and reliability.
2Adaptability or versatility
If magnetic domain walls are allowed to move freely for writing operations, then write flexibility is improved, but data retention deteriorates as written data may be canceled when moving to reverse domains
Solution Approach 1:
The patent segments the magnetic memory structure into distinct functional regions: storage layers for data retention, pinning layers for stabilization, and non-magnetic layers for separation. This segmentation allows domain walls to move freely in storage regions for flexible writing while being confined to specific pinning regions for stable data retention, preventing data loss when moving between domains.
Solution Approach 2:
The pinning layer acts as an intermediary element between the storage layers. It mediates the domain wall movement by providing intermediate pinning positions that guide and control domain wall motion. This intermediary structure enables flexible writing operations while ensuring data retention by preventing uncontrolled movement into reverse domains.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution stabilizes data writing operations by pinning magnetic domain walls in areas of lower magnetic energy, preventing data loss and ensuring stable data retention even when driven by a power supply.
Implementation Method 1
a magnetic domain wall between the first information storage area and the information buffer is pinned in a first area where magnetic energy is relatively low, and a magnetic domain wall between the second information storage area and the information buffer is pinned in a second area where magnetic energy is relatively low
Data Source
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AI summary
Embodiments of the present invention provide a write apparatus and a magnetic memory, where the write apparatus includes: a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer, where there is a first area between the first information storage area and the information buffer, there is a second area between the second information storage area and the information buffer, the first information storage area, the second information storage area, and the information buffer are made of a first magnetic material, the first area and the second area are made of a second magnetic material, and magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material; the first information storage area is configured to write first data to the information buffer; the second information storage area is configured to write second data to the information buffer; and the information buffer is configured to buffer data written from the first information storage area or the second information storage area, and write the buffered data to a magnetic domain of the magnetic memory, which can ensure write stability of the magnetic memory.