Magnetic Memory Cell Using Anomalous Hall Switching
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Solution Overview
Problem
Existing memory elements utilizing the tunnel magnetoresistance effect have room for improvement in terms of stability and efficiency, particularly in maintaining the magnetization direction of ferromagnetic materials and reducing variations in crystallinity.
Innovation Solution
A memory element is designed with a pinned layer composed of a first ferromagnetic material with fixed magnetization and a storage layer comprising an antiferromagnetic material exhibiting an anomalous Hall effect, where the magnetization direction of a second ferromagnetic material is reversible based on the anomalous Hall coefficient, allowing for faster and more stable data writing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If an antiferromagnetic material is used in the storage layer to enable reversible magnetization direction, then data writing speed and stability are improved, but the crystallinity variations increase
Solution Approach 1:
The patent changes the magnetic parameters of the storage layer by introducing an antiferromagnetic material with reversible magnetization direction, enabling faster data writing. This parameter change in magnetic properties allows the storage layer to switch states more rapidly while maintaining acceptable crystallinity through controlled material selection and layer design.
2Reliability
If the magnetization direction of the first ferromagnetic material is kept fixed for stable read characteristics, then read stability is improved, but the overall magnetic coupling efficiency decreases
Solution Approach 1:
The patent segments the magnetic functionality into two distinct layers: the pinned layer with fixed magnetization direction for stable read operations, and the storage layer with reversible magnetization for efficient data writing. This segmentation allows each layer to optimize its function independently, maintaining read stability while improving overall magnetic coupling efficiency through the storage layer's reversible properties.
Solution Approach 2:
The patent introduces dynamic magnetization reversal capability in the storage layer while keeping the pinned layer static. This dynamic property allows the storage layer to efficiently switch between magnetic states for data writing, improving magnetic coupling efficiency, while the static pinned layer maintains read stability through its fixed magnetization direction.
3Manufacturing precision
If more antiferromagnetic material is used to reduce crystallinity variations, then manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent optimizes the amount and composition of antiferromagnetic material to achieve acceptable crystallinity control without excessive material usage. By carefully adjusting the material parameters such as thickness, composition ratio, and deposition conditions, the patent reduces crystallinity variations while avoiding the need for complex multi-layer structures or additional processing steps that would increase device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration enhances magnetic coupling and reduces crystallinity variations, enabling faster spin reversal and more stable data storage operations with reduced antiferromagnetic material usage.
Implementation Method 1
The antiferromagnetic material exhibits an anomalous Hall effect, and a sign of an anomalous Hall coefficient of the antiferromagnetic material is configured to be reversible depending on the data written to the memory element
Implementation Method 2
The pinned layer is composed of a first ferromagnetic material having spontaneous magnetization, and a magnetization direction of the first ferromagnetic material is configured to remain fixed regardless of data written to the memory element
Data Source
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AI summary
According to one aspect of the present invention, a memory element is provided. The memory element comprises a pinned layer and a storage layer. The pinned layer is composed of a first ferromagnet having a spontaneous magnetization, and is configured such that the magnetization direction of the first ferromagnet is fixed regardless of data that is written to the memory element. The storage layer is configured to include an antiferromagnet and a second ferromagnet having a spontaneous magnetization. The antiferromagnet is configured to exhibit an anomalous Hall effect, wherein the sign of the anomalous Hall coefficient of the antiferromagnet is reversible in accordance with the data written to the memory element. The second ferromagnet is configured such that the magnetization direction thereof is reversible in conjunction with the sign of the anomalous Hall coefficient of the antiferromagnet in accordance with the data written to the memory element.