Magnetic Memory Device Heat Absorption Rate Variation
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Solution Overview
Problem
Magnetic memory devices face variations in the properties of magnetoresistive effect elements due to differences in heat absorption rates between layers, leading to inconsistent performance.
Innovation Solution
The magnetic memory device employs a configuration where the first layer stack and second layer stack have different heat absorption rates for their nonmagnetic layers, with the nonmagnet 32u having a higher heat absorption rate than nonmagnet 32d, and adjusting thermal budgets during the manufacturing process to ensure consistent properties across magnetoresistive effect elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the same heat absorption rate is used for all nonmagnetic layers in different layer stacks, then the manufacturing process is simple, but variations in properties of magnetoresistive effect elements occur due to thermal budget differences
Solution Approach 1:
The patent applies local quality by assigning different heat absorption rates to nonmagnetic layers in different layer stacks. Specifically, the first nonmagnetic layer has a first heat absorption rate while the second nonmagnetic layer has a second heat absorption rate that is different from the first. This localized differentiation compensates for thermal budget variations during manufacturing, ensuring consistent properties of magnetoresistive effect elements across different memory devices without requiring complex global process adjustments.
2Manufacturing precision
If thermal budget adjustments are made during manufacturing, then property variations are reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent implements parameter changes by modifying the heat absorption rates of nonmagnetic layers as a fundamental design parameter. By setting the first nonmagnetic layer with a first heat absorption rate and the second nonmagnetic layer with a second heat absorption rate, the invention inherently compensates for thermal budget differences during manufacturing. This parameter-based approach simplifies the manufacturing process compared to post-hoc thermal budget adjustments, as the compensation is built into the material properties rather than requiring complex process control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces variations in the properties of magnetoresistive effect elements, maintaining optimal performance by compensating for differences in thermal budgets and heat absorption rates, thereby stabilizing the resistance ratios and antiferromagnetic coupling forces.
Implementation Method 1
a heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack
Data Source
AI summary
A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.