Magnetic Memory Fabrication via Integrated Thermal Treatment and Passivation

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Current semiconductor fabrication methods for magnetic memory devices are inefficient, requiring separate processes for magnetic thermal treatment and passivation layer formation, leading to longer fabrication times and reduced reliability.

Innovation Solution

A method and apparatus for simultaneously performing magnetic thermal treatment and passivation layer formation in one reactor, aligning magnetization directions of ferromagnetic materials and using the tunnel barrier pattern as a seed layer for crystallization, while forming a conformal passivation layer using atomic layer deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If separate processes are used for magnetic thermal treatment and passivation layer formation, then process reliability is maintained, but fabrication time increases

Engineering Contradiction:

Improveprocess reliabilityVSAvoidfabrication time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent combines the magnetic thermal treatment process and the passivation layer formation process into a single integrated process step. The magnetic annealing treatment and atomic layer deposition (ALD) are performed simultaneously in one reactor, eliminating the need for separate process steps while maintaining the reliability of both processes through optimized process parameters and sequence control.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent implements continuous processing by performing magnetic thermal treatment and passivation layer formation without interrupting the process flow. The reactor maintains optimal conditions for both processes throughout, ensuring continuous useful action rather than stopping for separate process steps, thereby reducing total fabrication time while preserving product quality.

Inventive Principle:

Principle #20Continuity of useful action

2Ease of manufacture

If multiple separate fabrication steps are performed, then process control is simplified, but productivity decreases

Engineering Contradiction:

Improveprocess controlVSAvoidfabrication efficiency

Core Design Contradiction:

Ease of manufactureVSProductivity

Solution Approach 1:

The patent merges multiple fabrication steps (magnetic thermal treatment and passivation layer formation) into a single integrated process. This reduces the total number of process steps and improves productivity by eliminating transfer times and intermediate handling, while process control is maintained through coordinated control of process parameters within the single reactor environment.

Inventive Principle:

Principle #5Merging (Combining)

3Device complexity

If conventional fabrication methods are used, then process simplicity is maintained, but integration density is reduced

Engineering Contradiction:

Improveprocess simplicityVSAvoidintegration density

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The patent employs parameter changes in the integrated process, specifically utilizing magnetic field parameters during the thermal treatment to control magnetization directions of ferromagnetic materials. This enables precise control of magnetic memory pattern properties and achieves higher integration density through optimized crystallization and alignment, while the overall process remains relatively simple through the single-step implementation.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach shortens fabrication time, increases production efficiency, and enhances the reliability of semiconductor devices by optimizing the integration and alignment of magnetic memory patterns.

Implementation Method 1

performing a magnetic thermal treatment process on the magnetic memory patterns... magnetization directions of the free patterns included in the magnetic memory patterns may be aligned by the magnetic annealing process

Methodology Applied

Scientific EffectMagnetic annealing: Annealing

Implementation Method 2

the performing of the magnetic thermal treatment process may include crystallizing the free patterns and the pinned patterns by using the tunnel barrier pattern as a seed layer

Methodology Applied

Scientific EffectCrystallization: Crystallisation

Implementation Method 3

the passivation layer may be formed in an atomic layer deposition (ALD) process... the passivation layer may be conformally formed on the magnetic memory patterns

Methodology Applied

Scientific EffectAtomic layer deposition: Chemical Vapour Deposition

Data Source

PatentUS8852960B2Method of fabricating semiconductor device and apparatus for fabricating the same

Publication Date: 2014.10.07 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.