Magnetic Memory Structure for Low-Current Magnetization Switching
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Solution Overview
Problem
Existing magnetic memory devices require high critical currents to change the magnetization direction of free magnetic patterns, which leads to higher power consumption and reduced efficiency.
Innovation Solution
A magnetic memory device is designed with a conductive line and a magnetic layer on opposite surfaces, where the magnetic layer has a magnetization direction parallel to the surface and intersecting the conductive line's direction, reducing the critical current required for magnetization direction changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional magnetic memory device structure is used, then the device can store and read data, but high critical current is required to change the magnetization direction of the free magnetic pattern
Solution Approach 1:
The patent introduces a magnetic layer positioned on the opposite surface of the conductive line, creating a three-dimensional configuration where the magnetic layer's magnetization direction is parallel to the surface and intersects with the current direction. This spatial arrangement in another dimension enables spin-orbit torque to effectively change the magnetization direction of the free magnetic pattern at lower critical currents, resolving the contradiction between power consumption and magnetization switching capability.
Solution Approach 2:
The patent changes the magnetization direction parameter of the magnetic layer to be parallel to the surface and intersecting with the current direction, rather than perpendicular. This parameter change optimizes the spin-orbit torque effect, reducing the critical current required for magnetization switching while maintaining reliable data storage and read capabilities.
2Reliability
If high critical current is applied to change magnetization direction, then the magnetization can be switched, but power consumption increases
Solution Approach 1:
By positioning the magnetic layer on the opposite surface of the conductive line with its magnetization direction parallel to the surface and intersecting the current direction, the patent creates an optimized three-dimensional configuration. This dimensional arrangement enhances spin-orbit torque efficiency, enabling magnetization switching at lower currents and thus reducing power consumption while maintaining switching reliability.
Solution Approach 2:
The patent employs a composite structure consisting of a conductive line and a magnetic layer with specific magnetization characteristics. This composite configuration leverages the interaction between the conductive material and the magnetic material to generate spin-orbit torque, achieving efficient magnetization switching at reduced current levels and lower power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design reduces the critical current for changing the magnetization direction of the free magnetic pattern, thereby lowering power consumption and improving the efficiency of the magnetic memory device.
Implementation Method 1
the magnetic layer may include magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction
Data Source
AI summary
A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.