Magnetic Memory Element Multi-Domain Storage Layer Write Energy
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Solution Overview
Problem
Magnetic memory elements require significant write current and duration to transition between programmed states, particularly when switching to the antiparallel orientation, which is inefficient and energy-intensive.
Innovation Solution
A magnetic memory cell structure with a reference layer and a storage layer, where the storage layer is sized to have multiple magnetic domains, and optionally incorporates a thermal assist layer to enhance localized heating during writing, allowing for reduced write current and duration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional magnetic memory element structure is used, then data retention is achieved, but write current and duration are excessively high
Solution Approach 1:
The storage layer is segmented into multiple magnetic domains with different orientations (first domain with first orientation, second domain with second orientation). This segmentation allows selective switching of individual domains during write operations, reducing the total current and duration required compared to switching the entire storage layer uniformly.
Solution Approach 2:
Different regions of the storage layer are given different magnetic domain orientations and properties. The first region has a first magnetic domain orientation while the second region has a second magnetic domain orientation, allowing localized switching behavior that reduces overall write energy requirements while maintaining data retention through the multi-domain structure.
2Use of energy by moving object
If storage layer is made small for lower write current, then energy efficiency improves, but thermal management becomes difficult
Solution Approach 1:
The storage layer is divided into multiple magnetic domains that can be switched independently or in groups. This segmentation allows distributed heat generation across multiple smaller regions rather than concentrating thermal load in a single small region, improving thermal management while maintaining energy efficiency.
Solution Approach 2:
The magnetic domain structure allows dynamic control of switching behavior. During write operations, current can be distributed across multiple domains sequentially or in parallel, dynamically managing thermal load while maintaining low write current requirements for each individual domain transition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient writing and retention of data with reduced energy requirements by establishing and maintaining multiple magnetic domains, facilitating the transition between resistive states with lower current magnitudes and durations.
Implementation Method 1
a thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation
Implementation Method 2
The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation
Data Source
AI summary
An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.