Magnetic Memory Device Nonmagnetic Layer Stabilization

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Solution Overview

Problem

Magnetic memory devices face challenges in achieving stable operations due to instability in magnetization reversal and high power consumption, which affects their performance and speed.

Innovation Solution

The magnetic memory device incorporates a conductive layer with specific regions and thickness variations, along with magnetic layers and nonmagnetic layers, to optimize current density and spin torque, promoting stable magnetization reversal and reducing power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional magnetic memory device structure is used, then device simplicity is maintained, but magnetization reversal stability deteriorates and power consumption increases

Engineering Contradiction:

Improvemagnetization reversal stabilityVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The magnetic memory device is segmented into distinct functional layers: a first magnetic layer with in-plane magnetization, a second magnetic layer with perpendicular magnetization, and a nonmagnetic layer positioned between them. This segmentation allows each layer to contribute specifically to magnetization reversal stability while managing power consumption through optimized spin torque interactions.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the magnetic device are assigned different magnetic properties: the first magnetic layer exhibits in-plane magnetization while the second magnetic layer exhibits perpendicular magnetization. The nonmagnetic layer between them creates a localized region where spin torque is optimized for stable magnetization reversal, addressing the contradiction between reliability and energy use at specific locations within the device structure.

Inventive Principle:

Principle #3Local quality

2Productivity

If conventional magnetic memory device structure is used, then manufacturing process remains simple, but operation speed deteriorates

Engineering Contradiction:

Improveoperation speedVSAvoidlayer structure complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The device is divided into functionally distinct layers (first magnetic layer, nonmagnetic layer, second magnetic layer) that can be manufactured using standard sputtering techniques. Each layer has a specific thickness and magnetic property that contributes to high-speed operation, allowing the complex functionality to be achieved through systematic segmentation rather than monolithic design.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The magnetic memory device employs a composite structure combining ferromagnetic materials with different magnetization orientations (in-plane and perpendicular) separated by a nonmagnetic layer. This composite approach enables high-speed magnetization reversal by leveraging the complementary properties of different materials, achieving fast operation speeds while maintaining compatibility with existing manufacturing processes.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables stable and high-speed operations with reduced power consumption by effectively managing current density and spin torque, enhancing the overall performance of the magnetic memory device.

Implementation Method 1

optimize current density and spin torque, promoting stable magnetization reversal

Methodology Applied

Scientific EffectSpin torque:

Implementation Method 2

promoting stable magnetization reversal

Methodology Applied

Scientific EffectMagnetization reversal:

Data Source

PatentUS10811067B2Magnetic memory device with nonmagnetic layer between two magnetic layers

Publication Date: 2020.10.20 KK TOSHIBA

AI summary

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.