Vertical Magnetic Memory Device Dielectric Pillar Structure
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Solution Overview
Problem
Existing magnetic memory devices face challenges in achieving high-speed read/write operations with low power consumption and reliable electrical properties, particularly in mass production.
Innovation Solution
A vertical magnetic memory device is designed with a substrate, dielectric patterns, and magnetic patterns arranged in a specific configuration, including a dielectric pillar with penetration and protrusion parts, and magnetic patterns surrounding these structures, to enhance electrical properties and facilitate mass production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If magnetic memory devices use motion of magnetic domain walls, then high-speed read/write operations and low power consumption are achieved, but electrical properties and reliability are insufficient
Solution Approach 1:
The patent applies local quality by creating a dielectric pillar with different structural characteristics at different locations: the penetration part embeds into the first dielectric pattern to provide stable electrical isolation, while the protrusion part extends above the surface to enable precise magnetic pattern formation and tunnel barrier positioning. This localized structural differentiation resolves the contradiction by ensuring both high-speed domain wall motion (through proper magnetic layer configuration) and reliable electrical properties (through the embedded penetration part's stable isolation).
Solution Approach 2:
The patent implements nesting by placing the first magnetic pattern between the first dielectric pattern and the dielectric pillar, with the tunnel barrier pattern positioned between the second magnetic pattern and the first magnetic pattern. This nested arrangement ensures that each functional layer is properly contained and positioned, enabling high-speed operation through optimized magnetic coupling while maintaining reliability through controlled electrical isolation at each interface.
2Speed
If complex magnetic patterns are used to achieve high-speed operations, then performance is improved, but mass production difficulty increases
Solution Approach 1:
The patent applies preliminary action by pre-forming the dielectric pillar with its penetration part embedded in the first dielectric pattern before depositing the magnetic patterns. This preliminary structural preparation simplifies subsequent manufacturing steps, as the penetration part already provides defined isolation regions that guide the formation of magnetic patterns and tunnel barriers, enabling complex high-speed device structures to be manufactured through simplified sequential processing steps suitable for mass production.
3Productivity
If vertical magnetic structures are implemented, then device density is increased, but manufacturing precision requirements are heightened
Solution Approach 1:
The patent uses the first dielectric pattern as an intermediary layer that mediates between the substrate and the vertical magnetic structures. The dielectric pillar's penetration part embeds into this intermediary layer, providing a stable reference plane that simplifies the formation of vertical magnetic patterns and tunnel barriers. This intermediary structure reduces manufacturing precision requirements by providing well-defined interfaces and isolation regions that guide subsequent vertical structure formation, enabling high device density without proportionally increasing precision demands.
Data Source
AI summary
A magnetic memory device comprising a substrate, a first dielectric pattern on the substrate, a dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern, a first magnetic pattern between the first dielectric pattern and the dielectric pillar and including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part, a second magnetic pattern on the first dielectric pattern and surrounding a lateral surface of the second part, and a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern. The first magnetic pattern extends in a third direction perpendicular to a top surface of the substrate.