Magnetic Memory Device with Non-Linear Selector for Stable Operation
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Solution Overview
Problem
Magnetic memory devices face challenges in achieving stable operation due to instability in magnetic shift registers, which affects memory density and reliability.
Innovation Solution
A magnetic memory device design incorporating a first interconnect, a second interconnect, a first memory portion, and a controller, where the first memory portion includes a magnetic member, a magnetic element, and a non-linear element, with the controller managing shift and reading currents to distinguish between shift and reading operations, ensuring stable operation and high memory density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a magnetic shift register is used in the magnetic memory device, then memory density can be increased, but operational stability deteriorates
Solution Approach 1:
The magnetic memory device is divided into multiple memory portions (first memory portion, second memory portion, etc.), each with its own magnetic member, magnetic element, and non-linear element. This segmentation allows independent operation of each memory unit, improving overall stability while maintaining high density through parallel structure.
Solution Approach 2:
A non-linear element is introduced as an intermediary component between the magnetic element and the interconnects. This non-linear element acts as a selector that controls current flow, enabling stable read operations by preventing unwanted current paths and ensuring reliable magnetic state detection.
2Device complexity
If shift current and reading current share the same current path, then device complexity is reduced, but operation stability deteriorates
Solution Approach 1:
The device uses dynamic control of the non-linear element's resistance state to differentiate between shift and read operations. During shift operations, the non-linear element is in a low-resistance state allowing current flow; during read operations, it switches to a high-resistance state to block current and protect the magnetic state, enabling stable operation through temporal separation of functions.
Solution Approach 2:
The magnetic memory device employs periodic switching of the non-linear element between different resistance states to alternate between shift operations and read operations. This periodic action ensures that read operations occur at appropriate times when the magnetic state is stable, preventing interference and maintaining operational reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables stable operation and high memory density by effectively managing currents through the magnetic memory device, allowing for efficient information storage and retrieval.
Implementation Method 1
a first magnetic member (11), a first magnetic element (11s), and a first non-linear element (41)... The orientation of magnetization of the first magnetic member (11) can change with external energies applied to the first magnetic member (11)
Implementation Method 2
The electrical resistance of the first non-linear element (41) changes with a voltage applied to the first non-linear element (41)
Data Source
AI summary
According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.