Magnetic Memory Write Layout Using Spin Orbit Torque Currents
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Solution Overview
Problem
Existing magnetic memory devices face challenges in efficiently writing data to magnetoresistance effect elements without directly flowing a current, particularly in achieving reliable and efficient data storage states using spin orbit torque.
Innovation Solution
A magnetic memory device configuration that includes a conductor layer with spin orbit torque generation, combined with independent currents applied to multiple conductor layers to control the magnetization direction of magnetoresistance effect elements, allowing data to be written without direct current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If spin orbit torque is used to write data without direct current flow to the magnetoresistance effect element, then the reliability of data storage is improved, but the complexity of the device structure increases due to multiple conductor layers and independent current control
Solution Approach 1:
The device is divided into multiple conductor layers (first conductor layer, second conductor layer, third conductor layer) that can be independently controlled. Each conductor layer can receive independent current control signals, allowing selective activation of specific layers to write data to specific magnetoresistance effect elements. This segmentation enables reliable data storage by providing independent control paths while managing complexity through modular architecture.
Solution Approach 2:
The patent introduces conductor layers as intermediary components between the control system and the magnetoresistance effect elements. These conductor layers generate spin orbit torque as an intermediate mechanism to switch the resistance states of the magnetoresistance effect elements without requiring direct current flow through them. The intermediary conductor layers simplify the control mechanism while improving reliability.
2Productivity
If multiple conductor layers with independent current control are used, then the efficiency of data writing is improved, but the manufacturing complexity increases
Solution Approach 1:
The multiple conductor layers are segmented into distinct functional units (first, second, and third conductor layers) that can be independently controlled. This segmentation allows efficient data writing by enabling selective activation of specific conductor layers for specific write operations, improving productivity through parallel and selective control while managing manufacturing complexity through standardized modular structures.
Solution Approach 2:
The conductor layers are designed with multi-functionality, serving both as current pathways and as spin orbit torque generation elements. The same conductor layers that provide structural support also generate the necessary torque for switching magnetoresistance effect elements, reducing the need for additional specialized components and simplifying the manufacturing process while maintaining high data writing efficiency.
3Use of energy by moving object
If spin orbit torque is utilized to switch resistance states, then the energy efficiency is improved, but the precision of magnetization direction control becomes more challenging
Solution Approach 1:
The conductor layers serve as intermediary elements that convert electrical current into spin orbit torque, which then acts on the magnetoresistance effect elements to switch their resistance states. This intermediary mechanism improves energy efficiency by avoiding direct current flow through the magnetoresistance effect elements, while the structured arrangement of conductor layers provides the necessary precision for magnetization direction control through geometric and material design.
Solution Approach 2:
The patent utilizes parameter changes in the conductor layers, such as material composition, layer thickness, and current density, to optimize the spin orbit torque generation. By carefully controlling these parameters, the system achieves efficient energy utilization while maintaining precise control over the magnetization direction of the magnetoresistance effect elements, resolving the contradiction between energy efficiency and control precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables reliable and efficient data writing by utilizing spin orbit torque to switch resistance states in magnetoresistance effect elements, enhancing data storage reliability and efficiency.
Implementation Method 1
a method using spin orbit torque is known as a method of writing data without directly flowing a current to a magnetoresistance effect element
Implementation Method 2
A magnetic memory device using a magnetoresistance effect element as a storage element is known
Data Source
AI summary
According to one embodiment, a magnetic memory device includes: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction and arranged with the first conductor layer in a second direction intersecting the first direction; a first magnetoresistance effect element electrically connected to the first conductor layer; a second magnetoresistance effect element electrically connected to the second conductor layer; and a third conductor layer extending in the second direction and in contact with the first magnetoresistance effect element. In a write operation of writing data to the first magnetoresistance effect element, a first current is applied to the first conductor layer, a second current is applied to the second conductor layer, and a third current is applied to the third conductor layer independently of the first current and the second current.