Magnetic Memory Write Sequencing With Current-Then-Voltage Switching
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Solution Overview
Problem
Existing magnetic memory devices face challenges in reducing the write time for data storage in magnetoresistive effect elements.
Innovation Solution
A magnetic memory device design that includes a conductive layer, a magnetoresistive effect element, and a control circuit, where a current is caused to flow in the conductive layer during a first period, followed by applying a negative voltage to the magnetoresistive effect element during a second period to facilitate rapid switching between resistance states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a current is continuously applied to the conductive layer to maintain magnetization switching, then the write operation can be completed, but the write time increases and energy consumption increases
Solution Approach 1:
The patent applies periodic action by dividing the write operation into two distinct time periods: a first period where current flows through the conductive layer to generate spin orbit torque for initial magnetization switching, and a second period where the current is stopped and a negative voltage is applied to accelerate the switching completion. This periodic application of different control mechanisms significantly reduces the overall write time compared to continuous current application.
Solution Approach 2:
The patent utilizes parameter changes by transitioning from a current-driven mode (first period) to a voltage-driven mode (second period). The control circuit changes the control parameter from current to negative voltage after the first period, leveraging the voltage-controlled magnetic anisotropy effect to accelerate the magnetization switching process and reduce write time.
2Productivity
If a current is continuously applied to the conductive layer to maintain magnetization switching, then the write operation can be completed, but the energy consumption increases
Solution Approach 1:
The patent applies periodic action by dividing the write operation into two distinct time periods: a first period where current flows through the conductive layer to generate spin orbit torque for initial magnetization switching, and a second period where the current is stopped and a negative voltage is applied to accelerate the switching completion. This periodic application of different control mechanisms significantly reduces the overall write time compared to continuous current application.
Solution Approach 2:
The patent utilizes parameter changes by transitioning from a current-driven mode (first period) to a voltage-driven mode (second period). The control circuit changes the control parameter from current to negative voltage after the first period, leveraging the voltage-controlled magnetic anisotropy effect to accelerate the magnetization switching process and reduce write time.
3Loss of time
If a negative voltage is applied during the first period to accelerate switching, then the write time shortens, but the magnetization switching may not be complete
Solution Approach 1:
The patent applies preliminary action by first applying current to the conductive layer during the first period to generate spin orbit torque that initiates and partially completes the magnetization switching process. This preliminary action prepares the magnetization state for the second period, ensuring that when the negative voltage is applied, the switching is already well underway and can be completed reliably and quickly.
Solution Approach 2:
The patent applies periodic action by dividing the write operation into two distinct time periods: a first period where current flows through the conductive layer to generate spin orbit torque for initial magnetization switching, and a second period where the current is stopped and a negative voltage is applied to accelerate the switching completion. This periodic application of different control mechanisms significantly reduces the overall write time compared to continuous current application.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed design significantly shortens the write time by utilizing spin orbit torque and voltage-controlled magnetic anisotropy effects to efficiently switch the magnetization direction of the storage layer, thereby enhancing data write performance.
Implementation Method 1
utilizing spin orbit torque and voltage-controlled magnetic anisotropy effects to efficiently switch the magnetization direction of the storage layer
Implementation Method 2
utilizing spin orbit torque and voltage-controlled magnetic anisotropy effects to efficiently switch the magnetization direction of the storage layer
Data Source
AI summary
A magnetic memory device includes a conductive layer, a magnetoresistive effect element provided on the conductive layer and including a first end portion that contacts the conductive layer and a second end portion that is opposite to the first end portion, and a control circuit configured to perform a write operation to write data into the magnetoresistive effect element. The write operation including, in a first period, causing a current to flow in the conductive layer, and in a second period subsequent to the first period, stopping the current and applying a negative voltage to the second end portion with respect to the first end portion.