Magnetic Multi-Turn Sensor Crossings: Lithography and Field Weakening

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Solution Overview

Problem

Existing magnetic multi-turn sensors with GMR-MT technology face challenges due to non-ideal crossing structures, which can lead to distortion and nucleation events, compromising the sensor's performance.

Innovation Solution

The techniques involve forming crossings using lithography methods to minimize distortion, modifying material thickness and magnetic properties in the crossing area, and locally weakening the applied magnetic field to prevent nucleation events.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If crossings are formed with rounded corners to simplify manufacturing, then ease of manufacture is improved, but manufacturing precision deteriorates causing distortion and nucleation events

Engineering Contradiction:
Improveease of manufactureVSAvoidmanufacturing precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The crossing formation process is divided into multiple lithography steps with separate mask patterns. The first lithography step forms a first pattern, the second lithography step forms a second pattern, and their alignment creates the final cross shape. This segmentation allows each step to be optimized independently while achieving precise sharp corners in the final structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Magnetic shielding material is deposited over the crossing area before final lithography patterning. This preliminary magnetic shielding action prevents unwanted nucleation events during subsequent processing steps, ensuring that domain walls are guided correctly through the crossing without spurious nucleation that would compromise sensor performance.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If the crossing structure is made ideal with sharp corners to prevent distortion, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improvemanufacturing precisionVSAvoiddevice complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The complex cross structure is formed by combining simpler first and second patterns through multiple lithography steps. Each pattern can be generated using standard lithography tools, but their precise alignment creates the complex sharp-cornered cross shape that would be difficult to achieve in a single step. This segmentation reduces the complexity of individual manufacturing operations while achieving the desired precise geometry.

Inventive Principle:
Principle #1Segmentation

3Strength

If material thickness is increased in the crossing area to strengthen the structure, then strength is improved, but magnetic properties deteriorate affecting domain wall propagation

Engineering Contradiction:
ImprovestrengthVSAvoidmagnetic properties
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The magnetic film layer has different thicknesses in different regions. The crossing area has a first thickness optimized for structural integrity and domain wall guidance, while other areas have a second thickness optimized for magnetic properties. This local variation in thickness allows each region to be optimized for its specific function without compromising the other.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

Magnetic shielding material is introduced as an intermediary layer over the crossing area. This shielding material mediates between the structural requirements (strength) and magnetic requirements (domain wall propagation) by providing mechanical support while maintaining controlled magnetic field distribution that prevents unwanted nucleation events.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These techniques enhance the performance of closed-loop magnetic multi-turn sensors by reducing distortion and preventing nucleation events, thereby improving the accuracy and reliability of angular position sensing.

Implementation Method 1

forming, over a first photoresist material layer applied to the magnetic film layer, a first mask layer having a first pattern; exposing the first photoresist material layer

Methodology Applied
Scientific EffectPhotography: Photography

Implementation Method 2

crossings are included for GMR closed loop sensor topologies to guide magnetic domain walls from the inside to the outside of turns of a spiral-shaped or concentrically-looped structure

Methodology Applied
Scientific EffectMagnetic Field: Magnetic Field

Implementation Method 3

In a magnetic sensing device employing a giant magnetoresistance (GMR) effect, crossings are included for GMR closed loop sensor topologies

Methodology Applied
Scientific EffectGiant magnetoresistance: Magnetoresistance

Implementation Method 4

The domain wall generator generates domain walls in response to rotations of an external magnetic field, these domain walls then being injected into the magnetic strip

Methodology Applied
Scientific EffectMagnetic Field: Magnetic Field

Data Source

PatentUS12326483B2Magnetic multi-turn sensor structures and fabrication
Publication Date: 2025.06.10 ANALOG DEVICES INT UNLTD CO
  • US12326483B2 patent drawing
  • US12326483B2 patent drawing
  • US12326483B2 patent drawing

AI summary

The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors. Techniques, e.g., lithography techniques, are described to form crossings so that a distortion of an ideal shape is reduced or minimized. Another aspect describes techniques to modify the material thickness and/or magnetic properties in such an area of the crossing. Yet another aspect describes techniques to locally weaken the applied field in the area of the crossing to prevent nucleation events in this area. The techniques described are applicable to closed-loop magnetic multi-turn sensors including giant magnetoresistance (GMR-MT) sensors as well as tunnel magnetoresistive (TMR) multi-turn sensors.