Magnetic Recording Head Negative Polarization Layer Spin Transfer Torque
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Solution Overview
Problem
Current magnetic recording technologies face challenges in achieving high recording densities due to the limitations of write head performance, particularly in requiring high voltage and current for energy-assisted recording, which can degrade the write head and limit areal density capabilities.
Innovation Solution
A magnetic recording head design incorporating a main pole, trailing shield, and a spin torque layer with a multilayer structure that includes a negative polarization layer and a Cr-Cu layer to enhance write field performance, reducing the need for high voltage and current while maintaining high areal density capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If energy-assisted recording technology is used to improve recording density, then areal density capability increases, but voltage and current requirements increase causing component degradation
Solution Approach 1:
A spin torque layer is introduced as an intermediary component between the write pole and trailing shield. This layer generates spin transfer torque that assists the write field, enabling energy-assisted recording without requiring high voltage and current that would degrade write head components.
Solution Approach 2:
The patent modifies the magnetic properties of layers in the write head by controlling saturation magnetization values and layer thicknesses. By optimizing these parameters, the write head achieves enhanced write field performance with reduced power requirements, improving reliability while maintaining high recording density.
2Productivity
If main pole surface area is decreased to achieve higher recording density, then areal density capability increases, but write field strength decreases
Solution Approach 1:
The patent employs a composite magnetic layer structure consisting of multiple layers with different magnetic properties (different saturation magnetizations and thicknesses). This composite structure enhances the write field strength through constructive magnetic interaction, allowing high recording density with smaller main pole dimensions.
Solution Approach 2:
The patent creates local magnetic field enhancement by positioning the spin torque layer specifically between the write pole and trailing shield. This localized structure generates spin transfer torque precisely where needed, compensating for the reduced main pole surface area and maintaining adequate write field strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively enhances write field performance, improves reliability, and increases areal density capabilities while reducing the required voltage and current, thus addressing the limitations of existing technologies.
Implementation Method 1
a spin torque layer (STL) between the main pole and the trailing shield that provides energy-assisted write field enhancement
Implementation Method 2
The negative polarization layer is an FeCr layer... to enhance spin-transfer torque
Data Source
AI summary
Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head includes a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.