Magnetic Vortex Core Orientation Switching for MRAM
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Solution Overview
Problem
Current magnetic random access memory (MRAM) technologies using the TMR effect face challenges in achieving high integration and fast data recording due to the sensitivity of magnetic fields and the need for precise thickness control of insulating layers, leading to issues with magnetoresistance and coercive force, especially as magnetic elements shrink in size.
Innovation Solution
A method for recording information using a magnetic vortex in a magnetic recording element that allows for rapid switching and reading of data within nanoseconds, utilizing a magnetic field with varying direction to selectively switch the core orientation of the magnetic vortex, enabling high integration density and low power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the insulating layer thickness is controlled precisely to achieve high integration, then the magnetoresistance increases, but the manufacturing complexity increases due to the need for conformal formation over large wafers
Solution Approach 1:
The patent changes the fundamental parameter from insulating layer thickness control to magnetic vortex core orientation control. By applying a magnetic field with varying direction, the method switches the core orientation of the magnetic vortex between two states to represent binary information, eliminating the need for precise thickness control and complex conformal formation processes
Solution Approach 2:
The patent replaces the mechanical/physical constraint of insulating layer thickness control with a magnetic field-based switching mechanism. Instead of relying on precise physical dimensions, the system uses magnetic field direction variation to control the magnetic vortex core orientation, substituting a mechanical precision requirement with a magnetic control mechanism
2Area of moving object
If the magnetic elements are shrunk to achieve high integration, then the area decreases, but the magnetoresistance decreases and coercive force increases due to stray field effects
Solution Approach 1:
The patent introduces dynamic magnetic field control to manage the magnetic vortex behavior. By applying a magnetic field with varying direction, the system can dynamically switch the vortex core orientation while maintaining stable magnetic properties even in miniaturized elements, overcoming the static limitations of small-scale magnetic elements
Solution Approach 2:
The patent changes the control parameter from relying on fixed magnetic element dimensions to using variable magnetic field direction. This allows the magnetic vortex core orientation to be controlled externally through magnetic field parameters rather than being constrained by the physical dimensions of the miniaturized elements
3Measurement precision
If the insulating layer thickness varies by 0.2 Å or more, then the reading accuracy decreases, but the conformal formation requirement becomes more stringent
Solution Approach 1:
The patent replaces the mechanical measurement of insulating layer thickness with a magnetic field-based detection method. By reading the core orientation of the magnetic vortex through magnetic field interaction, the system achieves accurate information retrieval without depending on the physical thickness uniformity of the insulating layer
Solution Approach 2:
The patent shifts the measurement parameter from insulating layer thickness to magnetic vortex core orientation. This parameter change allows for accurate information reading based on magnetic state rather than physical dimension, eliminating the stringent thickness uniformity requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and rapid data recording and reading with low power consumption, allowing for high integration of unit cells above several Giga bytes per square inch, overcoming the limitations of existing MRAM technologies by stabilizing the magnetic vortex core orientation and reducing the impact of stray fields.
Implementation Method 1
a magnetic free layer in which a magnetic vortex is formed
Implementation Method 2
applying a magnetic field with a varying direction to the magnetic recording element
Implementation Method 3
an MRAM using giant magnetoresistance (GMR) effect
Implementation Method 4
an MRAM using tunneling magnetoresistance (TMR) effect
Data Source
Figure 1~3
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Figure 7~8
AI summary
Provided are a method for recording information in a magnetic recording element and a method for recording information in a magnetic random access memory. The method for recording in¬ formation in a magnetic recording element includes preparing the magnetic recording element having a magnetic free layer in which a magnetic vortex is formed. A current or a magnetic field whose direction varies with time is applied to the magnetic free layer to switch a core orientation of a magnetic vortex formed in the magnetic free layer to an upward direction or downward direction from a top surface of the magnetic free layer "0" or " 1 " is assigned according to the direction of the core orientation of the magnetic vortex formed in the magnetic free layer. According to the method for recording information in a magnetic recording element of the present invention, the core orientation of the magnetic vortex formed in the magnetic free layer of the magnetic recording element can be selectively switched by applying a current or magnetic field whose direction varies with time to the magnetic recording element, so that information can be easily and correctly recorded, lower power is consumed in recording information, and the switching for recording information can be performed very rapidly.