Magnetocapacitive Transistor Gate Structure for Non-Volatile Memory
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Solution Overview
Problem
Conventional semiconductor memory devices, particularly volatile memory cells, lose data when power is interrupted due to the dissipation of applied voltage, necessitating the development of non-volatile memory solutions that can maintain data storage without continuous power supply.
Innovation Solution
Integration of colossal magnetocapacitive materials in transistor gate structures to generate an electrical field, utilizing the colossal magnetocapacitance phenomenon to store charge and maintain data storage even without applied power, thereby enabling non-volatile memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional volatile memory cells use applied voltage to store data, then data storage is achieved, but data is lost when power is interrupted
Solution Approach 1:
The patent changes the physical parameter of the gate structure by incorporating colossal magnetocapacitive material, which exhibits extremely high dielectric constant (greater than 10,000) at specific temperatures. This parameter change enables the gate to retain electrical charge much longer than conventional dielectric materials, allowing data retention without continuous power supply.
Solution Approach 2:
The patent uses composite material structure by combining colossal magnetocapacitive material with magnetic field generating structures. The composite system leverages both the high dielectric constant property for charge storage and the magnetocapacitive effect for enhanced performance, achieving non-volatile memory functionality.
2Reliability
If Flash memory uses floating gate structures, then non-volatile data storage is achieved, but device complexity increases
Solution Approach 1:
Instead of using a complex floating gate structure, the patent changes the dielectric constant parameter of the gate material to achieve non-volatile storage. By using colossal magnetocapacitive material with dielectric constant greater than 10,000, the patent simplifies the gate structure while maintaining non-volatile data storage capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of colossal magnetocapacitive materials in semiconductor devices allows for the creation of non-volatile memory cells that retain data without continuous power, enhancing data storage capabilities and reducing power dependency.
Implementation Method 1
certain materials are capable of exhibiting what has been referred to as the 'colossal magnetocapacitance phenomenon' or 'colossal magnetocapacitance' under certain conditions... certain materials may be capable of exhibiting a relative permittivity of about 10,000 or more, or even 100,000 or more
Data Source
AI summary
Semiconductor devices include a transistor having a gate structure located close to a channel region that comprises a colossal magnetocapacitive material. The gate structure is configured to affect electrical current flow through the channel region between a source and a drain. The colossal magnetocapacitive material optionally may be disposed between two structures, one or both of which may be electrically conductive, magnetic, or both electrically conductive and magnetic. Methods of fabricating semiconductor devices include forming a colossal magnetocapacitive material close to a channel region between a source and a drain of a transistor, and configuring the colossal magnetocapacitive material to exhibit colossal magnetocapacitance for generating an electrical field in the channel region. Methods of affecting current flow through a transistor include causing a colossal magnetocapacitive material to exhibit colossal magnetocapacitance and generate an electrical field in a channel region of a transistor.