Passive Magneto-Electric Transducer Switch for CMOS Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices with magneto-electric transducers face challenges in cost-effectiveness and integration with standard CMOS fabrication processes, as they often require expensive materials and complex production methods to achieve sufficient sensitivity.
Innovation Solution
A semiconductor device design that incorporates a piezoelectric layer and a soft ferromagnetic structure, where the magnetic field induces tensile or compression stress, creating a charge that modulates the channel between diffusion regions, allowing the switch to open or close without the need for electrical energy, and can be fabricated using a CMOS process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If expensive materials such as GaAs or piezoelectric materials like PZT and AlN are used to achieve sufficient sensitivity, then the sensitivity of the magneto-electric transducer is improved, but the manufacturing cost increases and integration with standard CMOS fabrication process becomes difficult
Solution Approach 1:
The patent changes the material parameters by using standard CMOS-compatible piezoelectric materials (such as AlN or PZT) deposited in conventional CMOS fabrication lines, rather than requiring expensive GaAs or specialized piezoelectric materials. This allows the device to achieve sufficient sensitivity while maintaining compatibility with standard manufacturing processes and reducing costs
Solution Approach 2:
The patent employs a composite structure combining piezoelectric materials with ferromagnetic materials in a magneto-electric transducer configuration. This composite approach enables the device to achieve enhanced sensitivity through the coupling of piezoelectric and magnetic effects while using materials that can be processed in standard CMOS fabrication
2Measurement precision
If the piezoelectric layer area is increased to improve sensitivity, then the sensitivity of the transducer is improved, but the device area increases
Solution Approach 1:
The patent applies local quality by concentrating the piezoelectric material in specific high-stress regions between the ferromagnetic layers, rather than uniformly distributing it across a large area. This localized placement optimizes the piezoelectric effect where mechanical stress is greatest, improving sensitivity while minimizing the overall device footprint
Solution Approach 2:
The patent transitions from a planar configuration to a three-dimensional stacked structure with alternating ferromagnetic and piezoelectric layers. This vertical stacking enables the device to achieve high sensitivity through multiple interfaces within a compact area, effectively moving the functionality to another dimension
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables a cost-efficient, passive semiconductor switch with improved sensitivity and programmable conditions, capable of operating as a field effect transistor with variable resistance, effectively replacing reed switches in semiconductor devices.
Implementation Method 1
the magnetic field induces tensile or compression stress, creating a charge that modulates the channel between diffusion regions
Implementation Method 2
When the device is approached with a magnet, said structure is attracted towards the magnet
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
The present invention relates to a semiconductor device comprising : - a first diffusion region (110) of a first type with embedded therein a second and a third diffusion region (115) of a second type different from said first type, said second and said third diffusion region more doped than said first region, said second and third diffusion region each connected to a respective contact (130, 135), - a dielectric layer (120) covering at least an edge of said second and third diffusion region and the region in between said second and third diffusion region, - a piezoelectric layer (140a) disposed on, over, adjacent to or in contact with said dielectric layer (120), - a structure (150a) arranged to perform mechanical stress on said piezoelectric layer in response to a magnetic field.