Magnetoresistance Element with Multiple Stack Portions

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Magnetoresistance elements and sensors using them are limited to a restricted range of magnetic fields due to saturation regions, where they become unresponsive, reducing detection accuracy and operational range.

Innovation Solution

A magnetoresistance element with multiple stack portions, each having different spacer layers and materials, allowing for multiple linear response regions and extended operational range by varying sensitivity levels across different magnetic field strengths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a magnetoresistance element uses a single stack structure, then it achieves high sensitivity in a restricted linear range, but it enters saturation regions that limit the operational range

Engineering Contradiction:
ImprovesensitivityVSAvoidoperational range
Core Design Contradiction:
Measurement precisionVSAdaptability or versatility

Solution Approach 1:

The magnetoresistance element is divided into multiple independent stack portions (first stack portion, second stack portion, etc.), each with different spacer layer configurations. This segmentation allows each stack to operate in different magnetic field ranges, collectively extending the overall operational range while maintaining high sensitivity in each segment's linear region.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Each stack portion is given different local properties through varying spacer layer thicknesses and materials. The first stack portion has a first spacer layer with specific thickness and material composition, while the second stack portion has a second spacer layer with different thickness and material, creating locally optimized sensitivity characteristics for different magnetic field strengths.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If the spacer layer thickness is increased to extend the linear range, then the operational range increases, but the sensitivity decreases

Engineering Contradiction:
Improveoperational rangeVSAvoidsensitivity
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The invention changes the spacer layer parameters (thickness and material composition) for different stack portions. By varying these parameters across multiple stacks, the system achieves different sensitivity levels optimized for different magnetic field ranges, allowing the overall device to maintain high sensitivity across an extended operational range.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The magnetoresistance element uses composite structures with multiple stack portions having different spacer layer materials and thicknesses. This composite approach combines the advantages of different spacer configurations, achieving both extended operational range and maintained sensitivity through the collective response of multiple stacks with complementary characteristics.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution extends the operational range of magnetoresistance sensors, reducing saturation effects and improving detection accuracy across a broader range of magnetic fields, enhancing sensitivity and reducing offset errors.

Implementation Method 1

magnetic field sensing elements, such as Hall effect elements and/or magnetoresistance elements, which provide a signal (i.e., a magnetic field signal) in response to an applied magnetic field

Methodology Applied
Scientific EffectMagnetoresistance: Magnetoresistance

Data Source

PatentUS11022661B2Magnetoresistance element with increased operational range
Publication Date: 2021.06.01 ALLEGRO MICROSYSTEMS LLC
  • US11022661B2 patent drawing
  • US11022661B2 patent drawing
  • US11022661B2 patent drawing

AI summary

A magnetoresistance (MR) element includes a first stack portion comprising a first plurality of layers including a first spacer layer having a first thickness and a first material selected to result in the first stack portion having a first sensitivity to the applied magnetic field. The MR element also has a second stack portion comprising a second plurality of layers, including a second spacer layer having a second thickness to result in the second stack portion having a second sensitivity to the applied magnetic field. The first thickness may be different than the second thickness resulting in the first sensitivity being different than the second sensitivity.