Magnetoresistance Memory Layer Structure for Data Retention

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Solution Overview

Problem

Existing magnetoresistance memory devices face challenges in achieving high magnetic properties and retention of data due to issues with magnetic anisotropy and diffusion of impurities affecting the ferromagnetic layers.

Innovation Solution

Incorporating a ferromagnetic oxide layer between ferromagnetic layers to enhance interface magnetic anisotropy and suppress impurity diffusion, using alloys like gadolinium oxide or metal layers to stabilize the ferromagnetic structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If ferromagnetic layers are used to store data in magnetoresistance memory devices, then data storage capability is achieved, but magnetic property degradation occurs due to impurity diffusion and insufficient magnetic anisotropy

Engineering Contradiction:

Improvedata retentionVSAvoidferromagnetic layer integrity

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

A non-magnetic metal layer (first intermediary) is inserted between the ferromagnetic layer and the ferromagnetic oxide layer to prevent impurity diffusion and maintain ferromagnetic layer integrity. A second intermediary layer is also introduced between the ferromagnetic oxide layer and the next ferromagnetic layer to provide additional protection and stabilize the magnetic structure, thereby improving data retention without compromising composition stability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs a composite structure consisting of multiple ferromagnetic layers separated by non-magnetic metal layers and ferromagnetic oxide layers. This composite architecture combines the magnetic properties of ferromagnetic materials with the protective and stabilizing characteristics of non-magnetic metals and oxide barriers, achieving both high data retention and compositional stability.

Inventive Principle:

Principle #40Composite materials

2Reliability

If ferromagnetic oxide layers are introduced to enhance interface magnetic anisotropy, then magnetic property is improved, but device structure becomes more complex

Engineering Contradiction:

Improvemagnetic propertyVSAvoidlayer structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The magnetic structure is segmented into distinct functional layers: ferromagnetic layers for data storage, non-magnetic metal layers for protection and coupling control, and ferromagnetic oxide layers for magnetic anisotropy enhancement. This segmentation allows each layer to perform its specific function optimally while maintaining overall structural organization and manageability.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent optimizes the thickness and material composition parameters of each layer to achieve the desired magnetic anisotropy and magnetic coupling characteristics. By carefully controlling these parameters, the device achieves improved magnetic properties while keeping the structure as simple as possible within the constraints of functional requirements.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution results in a magnetoresistance memory device with improved magnetic properties and enhanced retention capabilities by maintaining the integrity of the ferromagnetic layers, thereby improving data storage reliability.

Implementation Method 1

The metal layer antiferromagnetically couples the first ferromagnetic layer and the first ferromagnetic oxide layer

Methodology Applied

Scientific EffectAntiferromagnetic coupling: Magnetism

Implementation Method 2

In the magnetoresistance memory device, a first ferromagnetic oxide layer including one of iron or cobalt is provided between a first ferromagnetic layer and a metal layer

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 3

A magnetoresistance memory device stores data using an element exhibiting a magnetoresistance effect

Methodology Applied

Scientific EffectMagnetoresistance effect: Magnetoresistance

Data Source

PatentUS20250275481A1Magnetoresistance memory device

Publication Date: 2025.08.28 KIOXIA CORP

AI summary

A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one element of a first element group. The second ferromagnetic oxide layer includes an oxide of an alloy of the one of iron and cobalt included in the second ferromagnetic oxide layer with a first element, which has a standard electrode potential lower than that of iron or cobalt and that of the one element of the first element group included in the second ferromagnetic layer.