Thin Magnetic Films TRIZ Cases
- MTJ Via Structure Using ALD for Seamless Conductivity
ALD-formed transition metal and tantalum-rich via layers enable small MTJ connections with seamless conductivity and stronger structural integrity.
- TMR Sensor Layer Structure for Out-of-Plane Field Detection
Alternating antiferromagnetic layers create a stable z-axis reference, allowing TMR sensors to detect out-of-plane magnetic field intensity changes.
- Anomalous Nernst Thermoelectric Element With Zero-Field Ferrimagnetism
Ferrimagnetic thermoelectric elements maintain anomalous Nernst conversion at zero field while resisting external magnetic interference.
- Magnetoresistance Memory Layer Structure for Data Retention
Ferromagnetic oxide and metal intermediary layers boost magnetic anisotropy and block impurity diffusion to improve memory data retention.
- Magnetic Racetrack Mesosurfaces via Reversible Ionic Liquid Gating
Ionic liquid gating creates reversible magnetic racetrack mesosurfaces on curved or flexible substrates without irreversible lithography steps.
- MTJ Layer Structure for Magnetic Anisotropy and Data Retention
Ferromagnetic oxide and metal coupling layers raise magnetic anisotropy, data retention, and MTJ resistance ratio in magnetoresistance memory.
- Magnetoresistive Element with PMA Vortex Sense Layer for Out-of-Plane Sensing
A PMA vortex sense layer enables high out-of-plane sensitivity in thin magnetoresistive elements, easing fabrication and increasing sensor density.
- 2D Magnetic Sensor Sense Layer Structure for Reduced Hysteresis
An antiferromagnetically coupled sense layer cuts stray-field hysteresis in 2D magnetic sensors while preserving sensitivity and signal quality.
- Hexaferrite Crystal Radiation Detection Using Magnetoelectric Resonance
A biased hexaferrite crystal uses photoinduced magnetoelectric resonance shifts to detect radiation faster and with lower X-ray dose.
- Magnetic Tunnel Junction Sense Layer for Low-Anisotropy Field Sensing
Segmented ferromagnetic sense layers cut anisotropy and angular error in self-referenced magnetic tunnel junction sensors at low fields.
- MTJ Transition Bilayer for Lower Switching Voltage and Endurance
A Ta and FeB transition bilayer improves tunnel barrier quality in MTJs, cutting switching voltage, power use, and endurance loss.
- ALD Via Structure for Seamless Magnetoresistive Stack Interconnects
Atomic layer deposition forms seamless sub-100 nm vias for magnetoresistive stacks, improving conductivity and structural integrity.
- Magnetoresistive Sensor With Perpendicular Anisotropy for Z-Direction Detection
A magnetoresistive sensor layer stack uses a metal multilayer to induce perpendicular magnetic anisotropy in the free layer.
- Spin-Orbit Torque Magnetic Field Sensor
A spin-orbit torque magnetic field sensor uses alternating current to switch a magnetic layer state.